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bipolar transistors
The base of this structure is undoped unlike in conventional bipolar transistors.
      
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors
      
New approach to the manufacturing of power microwave bipolar transistors: A computer simulation
      
Recombination in the space charge region and its effect on the transmittance of bipolar transistors
      
AbstractThe effect of recombination in the space charge region of the emitter junction on the transmittance of bipolar transistors is considered.
      
High-power high-voltage bipolar transistors based on complex semiconductor structures
      
A study of technological processes in the production of high-power high-voltage bipolar transistors incorporating an array of in
      
Three mathematical models for the thermal damage of semiconductor structures with a single junction (diodes, FETs, single-heterojunction bipolar transistors, and photodiodes) are characterized.
      
e.Q→∞ capacity multiplier composed of complementary composite follower using field effect and bipolar transistors is proposed.
      
Model and modeling of low temperature current gain of polysilicon emitter bipolar transistors
      
Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results.
      
A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model
      
An accurate and broad-band method for hetero junction bipolar transistors (HBT) small-signal model parameters-extraction is presented in this paper.
      
A method is presented that determines the carrier lifertime in bipolar transistors from the collector current decay after optical carrier generation.
      
On the optimisation of outside spacer bipolar transistors for 0.5 μm high performance mixed analog/digital BiCMOS
      
As a vehicle for this work we report on the integration of outside spacer bipolar transistors in a baseline digital 0.5 μm, 3.3 Volt, triple level metal CMOS technology.
      
The use of amorphous and microcrystalline silicon for silicon heterojunction bipolar transistors
      
The modification of the emitter structure of silicon bipolar transistors results in more freedom in the choice between sometimes conflicting device parameters.
      
Due to the larger bandgap of these emitter materials, the back injection of minority carriers is strongly suppressed in comparison with conventional bipolar transistors.
      
Furthermore, the small temperature coefficient of the current gainβ allows the use of these heterojunction bipolar transistors (HBT) over a wide temperature range.
      
 

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