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laser diodes
A continuous-wave lasing at 1 μm was excited by the radiation of semiconductor laser diodes at room temperature in nanocrystalline ceramics Y2O3 doped with Nd3+ and Yb3+ ions.
      
The heterostructures obtained are used to fabricate laser diodes.
      
It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790-801 and 965-980 nm) corresponding to the emission range of laser diodes.
      
The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix.
      
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution
      
The dependence of the degradation of high-power quantum-well GaAs/AlGaAs laser diodes, grown by molecular-beam epitaxy, on the crystal perfection of the individual layers of the heterostructure is investigated.
      
The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-based laser diodes
      
The power of the optical radiation of 4.2 W in a continuous-wave lasing mode was obtained in laser diodes with a mesa-stripe width of 100 μm.
      
Power conversion efficiency of quantum dot laser diodes
      
The power conversion efficiency of laser diodes with an array of quantum dots in the active region is analyzed.
      
MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes
      
Mesa stripe laser diodes with threshold current density Jth=100-200 A/cm2, internal optical loss αi=1.3-1.7 cm-1, and internal quantum efficiency ηi=60-70% have been fabricated.
      
Cross-sectional electrostatic force microscopy of semiconductor laser diodes
      
High power single-mode (λ=1.3-1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures
      
The basic condition for the single-mode lasing of laser diodes in a wide range of driving currents is shown to be the precise choice of the effective refractive index ΔnL discontinuity in the plane parallel to the p-n junction.
      
Single-mode and multimode quantum well (QW) laser diodes with emission wavelengths λ=1.0 and 1.58 μm, based on MOCVD-grown separate-confinement heterostructures, have been studied.
      
The grown structures are used for designing high-intensity multimode and single-mode mesa-stripe laser diodes operating in the range λ=1.7-1.8 μm.
      
The maximum continuous-wave lasing power achieved at room temperature is 1.6 W and 150 mW for multimode and single-mode laser diodes, respectively.
      
Internal quantum efficiency of stimulated emission of (λ=1.55 μm) InGaAsP/InP laser diodes
      
High-power laser diodes based on asymmetric separate-confinement heterostructures
      
 

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