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laser diode
The main technology for high power fiber lasers, including laser diode beam shaping, fiber laser pumping techniques, and amplification systems, are discussed in detail.
      
Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.
      
It is concluded that NYF:Er3+ crystals are promising as active media for tunable lasers with laser diode pumping.
      
Indium arsenide/gallium arsenide structures with vertically coupled quantum dots imbedded in the active zone of a laser diode are investigated by deep-level transient spectroscopy (DLTS), and the capacitance-voltage characteristics are analyzed.
      
A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
      
A CW output optical power of 5 W has been obtained for a single 100-μm-wide aperture mesa stripe laser diode emitting at 1.03 μm.
      
An output power of 185 mW is attained in the laser diode with the mesa-stripe width W=4.5 μm (λ=1480 nm).
      
Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode
      
These expressions can be used to assess the influence of the laser diode parameters on the polarization switching time of the output radiation.
      
Efficiency of cooling of laser diode arrays in contact with a porous permeable wall
      
An optical power of 5.2 W in the continuous operation mode was achieved at a laser diode temperature of 10°C.
      
Mesastripe single-mode InGaAsP/InP laser diode heterostructures with an optical emission power of 200 mW in the continuous lasing mode at two wavelengths (1.3 and 1.55 μm) were obtained by metalorganic VPE.
      
Laser diode structures on GaAs substrates with an active region employing laterally associated InAs quantum dots obtained by low-temperature MBE exhibit electroluminescence at a wavelength of 1.55-1.6 μm in a temperature range from 20 to 260 K.
      
This regime is developed as a result of a phase self-modulation of the light field in the presence of a thin active layer on the laser diode edge, provided that the layer exhibits absorption in the frequency region close to the lasing frequency.
      
Additional possibilities offered by using porous metallic materials for cooling laser diode bars
      
A new scheme of using porous metallic materials (PMs) for cooling laser diode bars is proposed, which provides for a two-dimensional regime of heat removal and reduces the effective filtration length of a cooling agent.
      
The values of characteristic limiting thermal fluxes are calculated for the heat sink made of a permeable PM, operating under conditions of a maximum permissible temperature of the active layer in a laser diode bar.
      
The position of the emitting region of a laser diode depends on the working current.
      
Dynamic characteristics of the optovoltaic effect in the mega-and gigahertz range have been studied by detecting longitudinal modes of a semiconductor injection laser diode with a tunable external resonator.
      
The passage to a pulsed lasing regime allowed the active region heating to be reduced and the output power to be increased to 145 W for a laser diode with a 100-μm exit aperture.
      
 

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