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integrated circuits
The device has been fabricated using standard integrated circuits processing methods combined with the Micro-Electro-Mechanical Systems process.
      
Concurrent Placement and Routing in the Design of Integrated Circuits
      
The method of parallel-sequential built-in self-testing in integrated circuits of the type SFPGAS
      
A novel approach is proposed for the characterization of the chemical stability of thin glass films used in the technology of silicon integrated circuits.
      
The storage device is based on KP537PY 13A static random-access memory integrated circuits.
      
A nondestructive method for measuring the moisture level in the sealed glass-metal or ceramic-metal packages of integrated circuits and semiconductor devices is suggested.
      
The scaling modules are made to SUMMA, MISS, and Euromechanics standards and use high-speed microcircuits of the 1500 family and programmable logic integrated circuits from Altera.
      
Highly efficient infralow-frequency conditions of a thick-layer insulative anodizing of aluminum and its alloys is substantiated and developed for manufacturing printed boards and integrated circuits.
      
Microwave Plasmatrons for Fabrication of High-Density Integrated Circuits
      
A Nondestructive Technique for Local Measurement of Dielectric Loss in Substrates of Integrated Circuits at Microwaves
      
A device for nondestructive measurements of dielectric loss in substrates of integrated circuits and film materials in a local 2-mm-diameter zone has been developed.
      
Highest wave types in transmission lines for three-dimensional microwave and extremely high frequency integrated circuits
      
The simple cubic fullerite C24 can be considered a promising low-dielectric-constant (low-k) material (?0 >amp;lt; 5.7) for use in fabricating interconnections and substrates intended for integrated circuits and nanoelectronics.
      
These structures have good electrical characteristics, which is supported by fabricating the submicrometer (0.2-0.5 μm) SOI-based CMOS transistors and test integrated circuits.
      
Gunn devices and integrated circuits based on them were fabricated by planar technology.
      
It is shown that only electroluminescent p-i-n structures are promising for use in silicon integrated circuits.
      
This process of dry cleaning can be recommended for use in the fabrication of integrated circuits containing an interlayer of a low-permittivity insulator.
      
The optimal duration of high-temperature annealing of structures in an inert atmosphere for their application in the technology of nanosize MOS integrated circuits is determined.
      
Dependence of the TPA-induced single-event transient response in linear integrated circuits on depth and position is investigated.
      
Our results illustrate an interesting in-depth resolution for the TPA technique, which enables three-dimensional imaging of charge-collecting volumes through the backside of integrated circuits.
      
 

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