助手标题
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
共[981]条 当前为第1条到20条[由于搜索限制,当前仅支持显示前5页数据]
 

相关语句
transistors
Progresses in organic field-effect transistors and molecular electronics
      
In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).
      
In this review, we briefly summarize the current status of organic field-effect transistors including materials design, device physics, molecular electronics and the applications of carbon nanotubes in molecular electronics.
      
The pulse shaper triggering the light-emitting diode is based on avalanche transistors.
      
Effect of Hot Carriers and Ionizing Radiation on the Spectrum of Interface States in MOS Transistors
      
It was established experimentally that the degradation of MOS transistors under the action of hot carriers and ionizing radiation takes place in various ways despite the formal similarity of the degradation processes.
      
A high-voltage nanosecond-pulse shaper based on microcircuits and high-power MOS transistors is described.
      
Experimental data on the stability of the metrological characteristics of integral hydrogen sensors based on Pd-gate MIS transistors in long-term service are presented.
      
The 100 transistors used in the modulator are connected in parallel, and their capacitors are switched to the primary winding of a pulse transformer.
      
The possibilities of the spectroscope are demonstrated by studies of the semiconductor structures used to manufacture high electron mobility transistors and high-power semiconductor lasers.
      
A high-voltage switch used in the generator circuit is based on ten IGBT transistors connected in series and operates jointly with two sections of magnetic pulse compression.
      
Experimental determination of stability of field-effect transistors under pulsed overloads
      
A setup for determining the susceptibility of Schottky-gate field-effect transistors (Schottky FETs) to reversible failures under exposure to high-power impulse noises is described.
      
The presented method is intended for selecting transistors comparatively simply using minimal facilities on the basis of criteria of reliable operation under exposure to pulsed overloads.
      
Molecularly selective field-effect transistors for determining nicotinamide adenine dinucleotide and its phosphates
      
Molecularly selective field-effect transistors are developed for determining oxidized and reduced forms of nicotinamide adenine dinucleotides (NAD+ and NADH) and their phosphates (NAD(P)+ and NAD(P)H).
      
The base of this structure is undoped unlike in conventional bipolar transistors.
      
It is shown that monolithic current amplifiers with collector-base cross coupling can ensure a single-stage amplification up to 40 dB in the frequency range from 0 to 0.1fc (wherefc is the cutoff frequency of the transistors).
      
The transistors were made by electron lithography and anisotropic etching to shape the gate.
      
It was studied on test MIS transistors of series-produced ICs by the methods of subthreshold currents, charge pumping currents, and internal photoemission.
      
 

首页上一页12345下一页尾页 

 
CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社