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This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate.
      
The design and fabrication on gate type resonant tunneling transistor
      
In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully.
      
The electrokinetic behavior of silicon plates covered with an oxide film is compared to the electrode behavior of a similar board of an ion-selective field-effect transistor.
      
The meter consists of a semiconductor magnetic-field sensitive double-collector transistor (magnetotransistor) with ferromagnetic concentrators of the magnetic field, differential amplifier, and digital voltmeter.
      
The converter is designed on the basis of a field-effect transistor with a balanced thermistor bridge connected to the drain circuit.
      
The output of this thermistor bridge is connected to the transistor gate through a circuit specifying the operating frequency.
      
A high-power pulse generator based on an inversely recovered diode and transistor switch is described.
      
A High-Voltage Reverse Switch-on Dynistor Switch with a Transistor Control Circuit
      
In this device, the dynistors are triggered by the current, which is formed using parallel control transistor circuits and low-power shunting capacitors.
      
The controlled nonlinear collector-emitter capacitance of a disabled low-frequency transistor is used as the correcting element.
      
A Transistor-Based Modulator for a Microwave Magnetron
      
A small-power transistor divider for photomultiplier tubes
      
A high-voltage transistor voltage divider for photomultiplier tubes consists of a high-resistance linear resistive divider specifying potential distributions between dynodes and emitter followers maintaining this distribution.
      
Physical processes occurring upon turning-on of the transistor in a converter stage with a saturable-core choke, placed in the clamping diode's circuit, are analyzed.
      
The period of the diode's charge removal and the energy lost in the transistor in various turn-on modes are determined.
      
A circuit that includes parallel transistor chains for the formation of forward and reverse currents of drift diodes is presented.
      
The structure can function both as annpn and as apnp lowvoltage transistor.
      
A two-dimensional numerical model of a single-electron transistor
      
A two-dimensional numerical model of a single-electron transistor is suggested.
      
 

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