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the bonding
The results indicate that large bond strength was obtained at the bonding interface.
      
The results indicate that the sensor presented better performances and that the bonding techniques can be used in MEMS packaging.
      
No cracks were observed in the bonding interface, and the bonding joints also showed good mechanical characteristics with pull stress of 3.0 to 12.0 g.
      
For the samples that were fabricated on the basis of the present technique, the bonding reliability has been evaluated.
      
An analytical program, based on Smith-Teng model and Cheng-Teng model, was provided to calculate the bonding length of CFP.
      
The basic principles of the effects of organic and inorganic components of yeast fermentation waste on the properties of the bonding system are analyzed.
      
In the framework of this method, the bonding energies of different oxides and oxide glass-forming systems are calculated with the inclusion of the second coordination sphere.
      
The nature of the bonding of the reagent with the surface of silica gel was studied by absorption spectrometry.
      
The bonding in complexes was analyzed by making use of the natural orbitals of metal-chlorine and metal-ligand bonds.
      
The far-infrared spectra show the bonding between the arsenic ion and N atom of urotropine.
      
The bonding order for the O2*molecules chemisorbed at polyaniline decreases by ~30% and the bond length increases by 24%.
      
The bonding molecular orbitals formed by these atomic py orbitals are not determined by this interaction.
      
The bonding in the structure is provided by numerous hydrogen bonds with the participation of all the H2O molecules, NH2 groups, and Cl- anions.
      
In the paramagnetic state, their coupling with the bonding feature forms an octahedral electron cage around each oxygen atom.
      
They connect the "bonding maxima" in the ?110? directions, more strongly in the antiferromagnetic state, building up an interatomic three-dimensional network.
      
The presence of delocalized electrons indicates that the bonding mechanism is partially metallic.
      
The emission of holes from the bonding state of diatomic artificial molecules formed by vertically coupled Ge/Si(001) quantum dots is studied by the admittance spectroscopy method.
      
This result contradicts the predictions of the quantum-mechanical model of molecular bonds and testifies to the crucial role of mechanical stresses in the formation of the bonding orbital in a system of elastically stressed quantum dots.
      
The interatomic distances in dispersed carbon depend on the degree in covalency of the bonding, which is a function of La.
      
The density difference is found to be an order of magnitude smaller than the crystal and sublattice densities, which is evidence of weak hybridization of the sublattices and of the predominately ionic character of the bonding between them.
      
 

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