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bulk silicon
The susceptibility of twinned samples is diamagnetic and close to the value of χ for bulk silicon, and the nonlinearity of the dependence χ (H) is insignificant.
      
The defect structure of a disturbed layer formed in the process of erosion cutting of bulk silicon carbide crystals has been studied experimentally.
      
When the temperature is lowered below T*, a transition to one-dimensional hopping conduction in the bulk silicon regions occurs.
      
Silicon nanopowders produced by electron-beam-induced evaporation of a bulk silicon sample in an argon atmosphere are studied by the photoluminescence technique and Raman scattering spectroscopy.
      
The cyclotron resonance spectra of holes in bulk silicon in quantizing magnetic fields are investigated in the low-temperature range.
      
The bulk silicon density that limits the destruction of the surface silicide is estimated.
      
Unlike metal clusters, where bulk behavior appears to be approached with around 30 atoms, large silicon clusters (n up to 70) are much less reactive than bulk silicon surfaces.
      
These results suggest that the clusters in the size range examined here are not small crystals of bulk silicon, but have compact, high coordination number structures with few dangling bonds.
      
Comparisons of the silicon cluster spectra to those of various forms of bulk silicon show that the cluster spectra have much in common with the spectrum of the most stable diamond structure of bulk crystalline silicon.
      
The order-N behavior of the method in DFT calculations was shown in total energy calculations performed on bulk silicon using supercells up to Si8000.
      
The sizes of the orbital-specific-basis-sets needed for precise calculations have been explored in demanding (bulk silicon) and favorable (water clusters) cases for a method based on the calculation of localized molecular orbitals.
      
Embedded-cluster calculations, which are much faster than full-system calculations, have been performed on an Si-vacancy of bulk silicon and on a water cluster with a displacing water molecule.
      
Thermal redistribution of boron implants in bulk silicon and SOS type structures
      
The redistribution of boron profiles in bulk silicon and SOS (silicon-on-sapphire) type structures is investigated in this paper.
      
The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
      
Acoustoelectric voltages versus absorbed surface acoustic wave (SAW) power measurements are used to nondestructively determine carrier mobilities in bulk silicon, GaAs and epitaxial Hg1-xCdxTe employing a separate medium convolver structure.
      
To achieve a better description of the conduction band of bulk silicon, a peripherals* state is added to the minimalsp3 tight-binding basis.
      
The development of a micromachining technique for processing arbitrary structures with high aspect ratios in bulk silicon is presented.
      
The spikes have the same crystallographic orientation as bulk silicon and always point along the incident direction of laser pulses.
      
We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon.
      
 

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