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recombination centers
It is shown that the use of the low-frequency discharge makes it possible to independently control the stability and concentration of recombination centers in a-Si.
      
Giant burst of photoconductivity in semiconductors upon an increase in the concentration of recombination centers
      
The maximum recombination rate for the highest excitation level is found to be Vpmax = 109 s-1 and the surface concentration of recombination centers is determined to be Nr = (2 ± 0.5) × 1011 cm-2.
      
We propose a model that allows us to explain the observed effects starting from the assumption that photoexcitations drift toward radiative recombination centers.
      
This effect is due to the overlap of the wave functions of recombination centers and a decrease in the activation energy of separation of genetic electron-hole pairs.
      
The absence of residual photoconductivity is attributed to the presence of r-and s-recombination centers in the crystals.
      
New slow-recombination centers were observed to exist in the irradiated CdS: In samples, with the maxima of optical quenching of the photoconductivity lying in the region of and .
      
It is suggested that the new recombination centers are related to complexes containing cadmium vacancies and indium atoms.
      
The phenomena observed are explained within the proposed model of transformation of recombination centers under the effect of ultrasound.
      
It is shown that the probable structure of recombination centers can be described in terms of the donor-acceptor pair model, in which oxygen complexes serve as donors and the acceptors are structural defects in the dislocation core.
      
These properties are explained by the lower concentration of non-radiative recombination centers in the film.
      
These regions of the structure each contain their own set of deep traps and recombination centers.
      
This set of traps and recombination centers can vary as a result of the introduction of hydrogen which creates induced "temporary" deep levels.
      
It is assumed that the growth of Te-activated crystals is accompanied by the development of thermally stable complexes of the form VZnTeSe that act as radiative recombination centers.
      
The introduction of excess Zn into the initial mixture produces a reduction in the concentration of VZn and, hence, in the concentration of radiative recombination centers.
      
It is suggested that radiative recombination centers of a new type are produced as a result of prolonged annealing in Zn vapor.
      
Annihilation of nonradiative recombination centers in GaAs/AlGaAs multiquantum well structures as a result of exposure to plasma
      
Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt
      
Transformation of nonradiative recombination centers in GaAs/AlGaAs quantum well structures upon treatment in a CF4 plasma follo
      
It is theorized that the defects induced by the CF4 plasma form complexes with defects introduced during growth and that these complexes are not recombination centers.
      
 

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