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signal intensity
Unlike the As2Se3 glass, for which the signal intensity increases almost linearly with an increase in the irradiation dose, the curves I(D) for ternary glasses are characterized by saturation dependent on the copper content in the network.
      
In comparison with a single-crystal monochromator, this device offers a 3.3-fold increase signal intensity and a slightly (1.5 times) worse resolution.
      
EXAFS and XANES data indicate an increase in the signal intensity in the Ti-Ti direction and a decrease in electron density on titanium atoms for [TiFe0.95Zr0.03Mo0.02]H0.36.
      
This is a process of complex bioexponential kinetics presented in spin diffusion spectra as a change in water signal intensity dependent on the protein postexcitation time.
      
The temperature dependence of the signal intensity from humid samples shows a decrease in temperature of freezing of the adsorbed water and presence of unfrozen water.
      
The chromosome distribution and signal intensity of the Spelt52 repeats varied in T.
      
In the experiments, the origin of the convergence zone, which is determined by a sharp increase in the received signal intensity, is found to be about 1.2 km nearer to the source than in the calculations.
      
Splitting of the magnetic-resonance line into several spectral components is observed at temperatures below 5 K, where spin-Peierls dimerization suppresses the magnetic susceptibility and the ESR signal intensity.
      
An expression for signal intensity fluctuations in optical coherent tomography has been obtained for the first time in the framework of the theory of the multiple scattering of low-coherent optical radiation in a random medium.
      
The dependences of the phase-conjugation signal intensity on its spectral composition are investigated.
      
The variations observed in the EPR signal intensity are explained by the aggregation of impurity-vacancy dipoles into complexes.
      
It is shown that the dependence of the output signal intensity on the incident radiation intensity exhibits a bistable behavior for the systems under study.
      
In silicon, reduction of the 29Si content brought about a substantial narrowing of the EPR line of the shallow P and As donors and an increase in the EPR signal intensity, as well as a noticeable increase in the spin-lattice relaxation time T1.
      
The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ >amp;gt; 0.14.
      
Further analysis has revealed, however, that, from the standpoint of signal intensity and signal-to-noise ratio, it is expedient to increase the energy of the beam atoms to 200-250 keV.
      
These changes are manifested in a decrease in the signal intensity and a long-wavelength shift of the electroluminescence (EL) spectrum when the substrate potential remains virtually unchanged (pseudo-tuning).
      
It was demonstrated that the effect of enhancement of the signal intensity of Raman scattering from porous silicon compared with the signal intensity from the substrate is associated with the presence of micrometer-size pores in the samples.
      
Analytical distributions of the inverse population, pump power, and signal intensity along an active light guide are derived.
      
An external alternating electric field leads to the appearance of an anomalous increase in the signal intensity at frequencies typical of those of the pulsed electric signal induced by a phase transition in the material.
      
Dependence of the AE signal intensity (count rate) on the mechanical stress level was established for the samples possessing various structures.
      
 

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