助手标题
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
共[1]页 共[19]条 当前为第1条到19条
 

相关语句
epitaxy technique
A single-crystal Si substrate and a Si film grown using the molecular-beam epitaxy technique serve as the diffracting crystals of the X-ray interferometer.
      
The paper reports the results of measurements of the lattice IR reflection and Raman scattering spectra for the Ga1-xAlxP (x=0-0.8) films grown on the GaP(111) substrate by the liquid-phase epitaxy technique.
      
A low-temperature liquid phase epitaxy technique involving rapid cooling of a solution melt has been developed for the growth of epitaxial GaAs films on germanium substrates.
      
Single crystal thin films of Bi substituted iron garnets have been grown by the liquid phase epitaxy technique.
      
Thin insulating and c-axis oriented films of La2CuO4 are grown using a molecular beam epitaxy technique.
      
The initial stages and subsequent growth of GaN on sapphire using ZnO buffer layers is reported for the hydride vapor phase epitaxy technique.
      
Synthesis is achieved via a catalyst-driven molecular beam epitaxy technique.
      
For the first time, the dopant profiling of a complete device structure grown by the chemical beam epitaxy technique for the realization of laser and semiconductor optical amplifier structures has been presented.
      
The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved.
      
Epitaxial growth conditions of V2VI3 semiconductors have been studied using the molecular beam epitaxy technique, which was applied to the growth of Sb2Te3 on Bi2Te3 substrates.
      
A nominal well width (20 nm) of Al0.08Ga0.92As quantum well structure has been fabricated by molecular beam epitaxy technique with the aim of obtaining a lasing device.
      
In this work the effects of growth temperature on the growth of gallium indium phosphide (GaInP) by the chemical beam epitaxy technique are reported.
      
A Vickers indentation method was used to determine the hardness of AlN and GaN, grown by the hydride vapor phase epitaxy technique, in the temperature range 20-1400 °C.
      
Perovskite-type SrTiO3 (STO) films have been grown on the Sr-modulated Si(001) substrates using "two-step growth method" with a molecular beam epitaxy technique.
      
Strong yellow luminescence (YL) was found in GaN grown by the halide vapor phase epitaxy technique, using an NH3-HCl-GaCl-N2-H2 growth chemistry.
      
Molecular beam epitaxy technique has been used to grow double layer heterostructure mercury cadmium telluride materials on silicon substrates for infrared detection in the mid-wavelength infrared transmission band.
      
The material used for this demonstration was a double-layer p-on-n heterostructure that was grown by a liquid-phase-epitaxy technique.
      
The present paper reports on a new approach to the oriented growth of boron nitride using a novel molten layer epitaxy technique.
      
The catalyst-driven molecular beam epitaxy technique provides for site-specific nanorod growth on arbitrary substrates.
      
 

首页上一页1下一页尾页 

 
CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社