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ion beam current
The source ensures an argon ion beam current of up to 80 mA at a discharge current and voltage of 1 A and 115 V, respectively, and a pressure of 1.5 × 10-2 Pa in the chamber.
      
Depending on the geometric parameter la (the anode length to diameter ratio) and pressure, maxima are observed in the discharge current and in the ion beam current extracted from an aperture at the center of the cathode.
      
Composite layers made in sapphire by implantation of 40-keV Cu+ ions at a dose of 1 × 1017 cm-2 and an ion beam current density varying from 2.5 to 10 μA/cm2 are studied.
      
Metal-nanoparticle-containing composite layers were synthesized by implantation of 60 keV Ag+ ions into a soda-lime silicate glass to a dose of 3×1016 ion/cm2 at an ion beam current density of 3 μA/cm2 and a substrate temperature of 35°C.
      
Sapphire-based composite layers implanted with 40-keV Cu+ ions to a total dose of 1.0×1017 cm-2 at an ion beam current density varied from 2.5 to 10 μA/cm2 were studied using Rutherford backscattering and optical reflectance methods.
      
Effect of the ion beam current density on the formation of implanted metal nanoparticles in a dielectric matrix
      
An increase in the ion beam current density leads to the formation of nanoparticles of a greater size as a result of the glass substrate heating and due to an increase in the diffusion mobility of implanted silver atoms.
      
These results suggest the possibility of controlling the dimensions of implanted nanoparticles in dielectrics by means of variation of the ion beam current density during the process.
      
In the case of platinum, the microwave heating led to an increase in the average ion charge from 2 to 7, while the maximum platinum ion charge reached 10 and the total ion beam current amounted to 300 mA.
      
With deuterons a tensorpolarization ofP33=-0.70±0.01 was obtained at a negative ion beam current of 42 nA.
      
A theoretical explanation of the two-frequency heating is also given, featuring the physical condition for which such effect occurs, with the following increase of the ion beam current and ion charge states.
      
We determined the dependence of the maximum heating temperature and penetration depth on the maximum value of the ion beam current.
      
The ion energy and ion beam current density values of the most efficient erosive impact are determined.
      
The etch rate of GaN was found to increase linearly with Ar ion beam current density, increase linearly then saturate with Ar ion beam energy, vary slightly with Cl2 flow rate, and lastly, increase moderately with substrate temperature.
      
A uniform ion beam current was maintained by a stabilized gas flow system.
      
An EXB probe, also located downstream of the thruster, measures the double and single ion beam current.
      
Figure 6 shows the derivative of the measured ion beam current as function of a retarding field applied on the sample.
      
Primary ion beam current and mass resolution are typically far from maximized when operated in the highest lateral resolution mode.
      
This problem is also related to the ion beam current density and is described in more detail below.
      
Therefore the combination of the ion beam current density and vacuum conditions of this experiment may lead to significant experimental error.
      
 

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