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diode lasers
The principles of stabilization of the operating modes of diode lasers and the circuit designs for joint temperature and current stabilization and radiation power control are described.
      
The factors responsible for the short service life of diode lasers are discussed, and recommendations for their application are given.
      
A temperature stabilization system for diode lasers
      
A system is described that measures the temperature of diode lasers and stabilizes it with an accuracy within ±0.005°C and ±0.02°C, respectively.
      
Spectrum-tunable liquid-crystal polarization isolator for diode lasers
      
Similar devices can be effective for automated spectroscopic systems intended for consecutive operation in various zones of the optical spectrum with the use of several diode lasers.
      
A method of dual-wavelength differential absorption with the use of diode lasers is proposed.
      
InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3-4 μm
      
Diode lasers based on InAsSb/InAsSbP with separate electrical and optical confinement, emitting in the wavelength interval 3-4 μm, are investigated.
      
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum
      
The characteristic features of the continuous-wave lasing spectra near 3.3 μm of multimode InAsSbP/InAsSb/InAsSbP double-heterostructure diode lasers are shown.
      
The current dependence of the output frequency of InAsSb/InAsSbP diode lasers at wavelengths near 3.6 μm is studied.
      
Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 μm) due to nonlinear optical effects
      
A study has been made of wavelength tuning in double heterostructure InAsSb/InAsSbP-based diode lasers.
      
Current-tunable diode lasers with narrow emission lines for laser spectroscopy in the 3.2-3.4 μm wavelength range are developed.
      
Emission spectra and the intensity patterns of InAsSbP/InAsSb/InAsSbP-based diode lasers with different cavity lengths and a spectral range of 3-4 μm were studied.
      
High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
      
Diode lasers based on several layers of self-organized quantum dots (QD) on GaAs substrates were studied.
      
Current-tunable diode lasers with a narrow emission line (7-10 MHz) were designed on the basis of a InAsSb/InAsSbP heterostructure for low-temperature (15-60 K) operation within the range of 3.2-3.4 μm.
      
Mesa-strip diode lasers with a threshold density of current Jth=150-200 A/cm2, internal optical loss factor αi=1.6-1.9 cm-1, and an internal quantum yield ηi=85-95% were fabricated.
      
 

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