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switching time
The switching time is ≤600 ns with current control and ≤50 ns with the microwave power modulation.
      
It is found that stochastic resonance is observed under slow (compared with the Kramers switching time) dichotomic noise and the signal-to-noise ratio (SNR) has a maximum for a noise amplitude equal to static bias.
      
Switching time dispersion and retention of bistable states in Langmuir-Blodgett ferroelectric films
      
Ultrafast switching of optical nonlinearity in molecular aggregates with a typical switching time of about 450 fs is demonstrated.
      
The use of several loops makes it possible to significantly reduce energy expenditures on switching and to reduce the switching time by approximately a factor of 10.
      
Estimates of the threshold and S-N switching time show good agreement with the experimental data.
      
It is shown that both Si/CaF2-based logical elements and memory elements proposed operate at temperatures from 77 to 300 K, have a switching time of 10-12-10-10 s, and are compatible with silicon IC technology.
      
Polarization switching time for semiconductor laser radiation
      
Expressions are derived for the polarization switching time for semiconductor laser radiation.
      
These expressions can be used to assess the influence of the laser diode parameters on the polarization switching time of the output radiation.
      
Switching time of planar ferroelectric capacitors using strontium titanate and barium strontium titanate films
      
A substantial decrease in the switching time of the liquid crystal systems with fullerene-containing orienting layers is demonstrated.
      
It is shown that the dependence of the energy required for switching the spatial light modulator cells on the switching time exhibits a threshold character.
      
A simple model of such a "multistreamer" breakdown is proposed according to which the switching time is virtually independent of the streamer parameters and is inversely proportional to u.
      
In addition, the effects of some parameters such as switching time, gas temperature at the inlet of regenerator, height of regenerator and specific heat of the regenerative materials on heat saturating time were discussed.
      
The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on.
      
To optimize the performance of isolation and insertion loss, based on normal design, the effects of Gate Series Resistances (GSR) on insertion loss and switching time are analyzed for the first time.
      
Asymmetric antiferroelectric liquid crystal displays (AAFLCD) are attractive since they show a very well defined off state and fast switching time.
      
The effects of flow rate in Sections 2 (Q2) and 3 (Q3), switching time, feed flow rate and feed concentration on the operating performance parameters: purity, recovery, productivity and desorbent consumption were studied.
      
The proposed switch achieves good performances, including a low insertion loss of -11.0dB, a fiber-waveguide coupling loss of -4.3dB and a fast response speed measured to be 3.5 and 8.8 μs for raise and fall switching time, respectively.
      
 

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