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growth technology
The problem arises in applications connected with modified Czochralski crystal growth technology using the heat field rotation method.
      
A setup and growth technology for manufacturing carbon nanotubes by the catalytic gas-phase pyrolysis of ethanol are described.
      
InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties
      
One of the most important characteristics associated with crystal growth technology is the entrapment of inclusions by the growing crystal.
      
The AlGaAs diode laser is based on organometallic vapour epitaxial crystal growth technology.
      
The superior results are mainly due to the use of low temperature growth technology.
      
In addition, we also found this growth technology is available to directly grow InP buffer layers on GaAs.
      
HgCdTe MBE technology is becoming a mature growth technology for flexible manufacturing of short-wave, medium-wave, long-wave, and very long-wave infrared focal plane arrays.
      
In the last case, the high field limitation is due to surface flashover phenomena taking place at 100-175 kV/cm in vacuum ambient and depending strongly on the material growth technology and the gap length.
      
The growth technology developed over the years at Rockwell using the Riber 2300 R>amp;amp;D system was transferred to the 32P system in less than six months.
      
The data demonstrate that MOCVD has progressed significantly toward being a practical and viable vapor phase in situ growth technology for advanced bandgap-engineered HgCdTe detector arrays.
      
The molecular beam epitaxy (MBE) growth technology is inherently flexible in its ability to change the Hg1-xCdxTe material's bandgap within a growth run and from growth run to growth run.
      
Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiat
      
It was found that Hg0.7Cd0.3Te was characterized by a modulus of elasticity of Eavg ~ 50 GPa and hardness of Havg ~ 0.66 GPa, independent of growth technology.
      
The insertion of advanced microwave devices into high-volume applications is critically dependent upon a robust and reproducible epitaxial growth technology accompanied with a reproducible process technology.
      
By combining wafer-scale carbon nanotube growth technology with microfabrication techniques, it is possible to mass produce high-performance emitter arrays that can deliver high current beams at high frequencies.
      
A disadvantage, for current growth technology, is the low efficiency.
      
During the term of the contract, Cermet will demonstrate a 2-inch diameter GaN crystal growth technology.
      
In terms of growth technology, the equipment is essentially the same as for inorganic molecular beam epitaxy.
      
In fact, the diamond growth technology in big areas is surrounded by secrets.
      
 

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