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recombination center
A study is made of how the presence of a potential barrier to the reverse transition of carriers to the recombination center and the initial triplet state of the charged pairs affects the geminate recombination.
      
A deep level of unknown origin, with ionization energy Ec-1.45 eV, acts as an effective recombination center for minority carriers, and controls recombination processes.
      
A radiative recombination center with strong electron-lattice coupling has been observed for the first time.
      
A new recombination center in heavily doped GaAs: Zn grown by liquid-phase epitaxy
      
It is shown that a novel radiative recombination center is formed in these layers.
      
Furthermore, the second recombination center, which manifests itself only in the aforementioned temperature region, is an acceptor of a non-Coulomb type with an ionization energy of about 10-15 meV.
      
It can also create some deep impurity energy levels serving as photoelectron-photohole recombination center, which accelerates the electron-hole recombination.
      
The capture cross section of a trapping or recombination center for a charge carrier has been defined as the quotient of the capture coefficient and the average thermal velocity of the carrier distribution.
      
A sharp luminescence band at 0.970 eV with fine structure is found after laser annealing and is identified as a recombination center similar to irradiation induced defects in crystalline Si.
      
It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes.
      
The recombination of a pair of free carriers through a recombination center at the heterointerface provides the correlation between the electron and hole ensembles necessary to explain the observed noise reduction.
      
At higher temperatures, MuT acts as an electron-hole recombination center.
      
The donor-acceptor complex NaCdClTe is proposed as the radiative recombination center responsible for the 1.44 eV PL band as well as for the photoconductivity.
      
As a result, the process of surface-trapped hole tunneling back into the particles to form V**O recombination center is blocked.
      
The activation peculiarities and trapping and recombination center parameters caused by copper ion adsorption on a differently oriented germanium surface in contact with a neutral electrolyte were investigated.
      
models which have been successful in explaining observations of other defect phenomena are used to identify the native nonradiative recombination center in GaP.
      
Data are available for a wide range of specimens and therefore a method of correlation ofLp with electron trap concentrations has been developed that allows easy identification of the dominant recombination center.
      
From the dependence of the PL intensity on the excitation power, strong emission is considered to be due to some recombination center.
      
We have found that level T3 behaves more like a recombination center than like an ordinary electron trap.
      
The reduction of minority carrier lifetime in undoped films can be explained by an effective SRH recombination center associated with the Hg vacancy.
      
 

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