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liquid phase epitaxial growth
In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
The influence of holmium addition during the liquid phase epitaxial growth (LPE) on the optoelectronic properties of InP and GaInAsP semiconductor layers has been studied.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs.
      
The liquid phase epitaxial growth of rare earth-substituted magnetic garnet films suitable for magnetic bubble domain application by both vertical and horizontal dipping using PbO and B2O3 as flux is reported.
      
Liquid phase epitaxial growth of lattice-matched In0·53Ga0·47As layers on InP substrates is investigated with particular emphasis on the role of interface defects on layer quality.
      
Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects
      
Mass transfer rate measurement of short time liquid phase epitaxial growth using an electrochemical method
      
The p+-n+-i(v)-n+ GaAs Tunnett diodes have been fabricated with control of the growing diffusion technique in TDM CVP liquid phase epitaxial growth.
      
Simulation studies of liquid phase epitaxial growth of In1-xGaxAsyP1-y
      
Liquid phase epitaxial growth of In1-xGaxAsyP1-y, a well known quaternary compound semiconductor, has been studied systematically.
      
Single crystal epitaxial layers of Gaxln1-xP alloys have been grown by the steady-state liquid phase epitaxial growth technique on (111)B GaAs substrates.
      
Liquid phase epitaxial growth of InAsxSbyPl-x-y layers on InAs
      
Liquid phase epitaxial growth of Gal-xInxSb on GaSb by stepwise grading
      
In order to develop the use of this material we have investigated the liquid phase epitaxial growth of Ga1-xInxSb on GaSb via stepwise grading in the range of 400-600°C using a horizontal slider boat in a transparent furnace.
      
Liquid phase epitaxial growth of InAs1-xSbx on GaSb
      
The thermodynamic incompatibility of the system, i.e., the strong tendency for the In-As-Sb liquid to dissolve the GaSb substrate, was solved via a novel liquid phase epitaxial growth technique.
      
Current controlled liquid phase epitaxial growth of Hgl-xCdxTe
      
Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON >lt;111>B InP
      
 

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