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The thermoelectric figure-of-merit Z has been found to correlate with the parameters of the many-valley energy-band model including anisotropic carrier scattering.
      
It is shown that the k points of the general position, which form a complex figure in the BZ, make the main contribution to the interband transitions.
      
A new method is suggested for fabricating nanocrystalline silicon by using high-dose [Figure not available: see fulltext.] irradiation with rare-gas ions.
      
The optimum parameters providing an increase in the thermoelectric figure-of-merit are specified.
      
It is found that even nonrelativistic [Figure not available: see fulltext.] motion of the plasma medium can substantially influence the parameters of radiation from prescribed unsteady sources.
      
The spatial structure and growth rate of hydromagnetic waves with frequencies [Figure not available: see fulltext.] are considered in a one-dimensional model.
      
Thermoelectric figure of merit of monopolar semiconductors with finite dimensions
      
The figure of merit of monopolar nondegenerate semiconductors is theoretically investigated.
      
The transverse thermoelectric figure of merit and the sensitivity of a sensor responding to small heat fluxes are calculated.
      
The figure of merit and the sensitivity of a thermoelectric element with superconducting layers exceed the respective parameters of a structure with metallic layers by a factor of 2-3.
      
Hole concentration and thermoelectric figure of merit for Pb1-xSnxTe:Te solid solutions
      
The maximum thermoelectric figure of merit Z is (1.0-1.1)×10-3 K-1 at T=800-850 K.
      
The thermoelectric figure of merit of a semiconductor p-n junction is calculated in terms of the diode theory taking account of the bipolar thermal conductivity.
      
The thermoelectric figure of merit of a Bi2Te3 diode is estimated and it is shown that the Ioffe criterion may be at the same level as the best modern thermoelectric materials but cannot exceed unity.
      
Record values for the effective figure of merit P2Y are achieved.
      
Calculations of the charge-carrier mobility and the thermoelectric figure of merit for multiple-quantum-well structures
      
The thermoelectric figure of merit of structures with multiple quantum wells (MQWs) was calculated taking into account the variations in the relaxation time of charge carriers compared to that in a bulk sample.
      
The magnitude of the figure of merit for a MQW structure is found to be equal to that for a bulk sample if the chemical potential in each of the cases is chosen from the condition for the highest figure of merit.
      
Thermoelectric figure of merit in solid solutions with phonon scattering by off-center impurities
      
The thermoelectric figure of merit Z of the studied alloys has been determined in the range 80-300 K.
      
 

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