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The stimulation of photoluminescence in a graded-gap AlxGa1-xAs semiconductor was studied.
      
Energy positions of the exciton recombination lines in the QWs with step-graded In distribution were calculated, and good agreement with the experimental data was obtained.
      
Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes
      
The characteristics of the photodiodes based on CdxHg1-xTe solid solutions with graded gap layers were calculated in the context of a one-dimensional diffusion-drift model.
      
The parameters of the photodiodes were shown to be improved when the p-n junction was located in the near-surface graded gap region rather than in the central homogeneous section of the structure.
      
Effect of the charge-carrier drift in a built-in quasi-electric field on the emission spectrum of the graded-gap semiconductors
      
The shape of the band-to-band photoluminescence spectrum for a graded-gap semiconductor in conditions of nonequilibrium charge-carrier transport affected by a built-in quasi-electric field E=e-1?Eg was calculated.
      
The calculations were confirmed by measuring the photoluminescence spectra for the AlxGa1-xAs undoped (n≤1016 cm-3) graded-gap solid solutions with E varying in the range of 90-650 V/cm at 300 K.
      
Reverse current in graded-gap p-n structure with nonmonotonic coordinate dependence of the band gap
      
The specific features of the reverse current of a graded-gap p-n structure with the band gap linearly increasing with the distance from the interface plane are analyzed theoretically.
      
It is shown that the graded gap makes it possible to substantially reduce the reverse current of the p-n junction associated with the thermal generation of carriers in the base regions of the structure and at ohmic contacts.
      
To decrease the surface effect on the recombination processes, the graded-gap Hg1-xCdxTe layers with x increasing towards the surface were grown.
      
The current response of AlxGa1-xAs graded-gap layers to optical and X-ray radiation was studied.
      
In the layers with a lowered doping level of the narrow-gap region of the graded-gap AlxGa1-xAs layer, the voltage-power sensitivity to X-ray radiation with energy lower than 15 keV is as high as 1.6×103 V/W in the photovoltaic mode.
      
The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductors
      
The data obtained are related to the coordinate dependence of recombination probability for graded-gap semiconductors.
      
Nonlinear photoluminescence of graded-gap AlxGa1-xAs solid solutions
      
Size effect in two-photon absorption of recombination radiation in graded-gap AlxGa1-xAs solid solutions
      
The influence of the size effect in photoluminescence on two-photon absorption in the course of reradiation in undoped graded-gap AlxGa1-xAs solid solutions was studied.
      
The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure.
      
 

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