graded 
The stimulation of photoluminescence in a gradedgap AlxGa1xAs semiconductor was studied.


Energy positions of the exciton recombination lines in the QWs with stepgraded In distribution were calculated, and good agreement with the experimental data was obtained.


Study of the effect of graded gap epilayers on the performance of CdxHg1xTe photodiodes


The characteristics of the photodiodes based on CdxHg1xTe solid solutions with graded gap layers were calculated in the context of a onedimensional diffusiondrift model.


The parameters of the photodiodes were shown to be improved when the pn junction was located in the nearsurface graded gap region rather than in the central homogeneous section of the structure.


Effect of the chargecarrier drift in a builtin quasielectric field on the emission spectrum of the gradedgap semiconductors


The shape of the bandtoband photoluminescence spectrum for a gradedgap semiconductor in conditions of nonequilibrium chargecarrier transport affected by a builtin quasielectric field E=e1?Eg was calculated.


The calculations were confirmed by measuring the photoluminescence spectra for the AlxGa1xAs undoped (n≤1016 cm3) gradedgap solid solutions with E varying in the range of 90650 V/cm at 300 K.


Reverse current in gradedgap pn structure with nonmonotonic coordinate dependence of the band gap


The specific features of the reverse current of a gradedgap pn structure with the band gap linearly increasing with the distance from the interface plane are analyzed theoretically.


It is shown that the graded gap makes it possible to substantially reduce the reverse current of the pn junction associated with the thermal generation of carriers in the base regions of the structure and at ohmic contacts.


To decrease the surface effect on the recombination processes, the gradedgap Hg1xCdxTe layers with x increasing towards the surface were grown.


The current response of AlxGa1xAs gradedgap layers to optical and Xray radiation was studied.


In the layers with a lowered doping level of the narrowgap region of the gradedgap AlxGa1xAs layer, the voltagepower sensitivity to Xray radiation with energy lower than 15 keV is as high as 1.6×103 V/W in the photovoltaic mode.


The effect of chargecarrier drift in the builtin quasielectric field on the emission spectrum for gradedgap semiconductors


The data obtained are related to the coordinate dependence of recombination probability for gradedgap semiconductors.


Nonlinear photoluminescence of gradedgap AlxGa1xAs solid solutions


Size effect in twophoton absorption of recombination radiation in gradedgap AlxGa1xAs solid solutions


The influence of the size effect in photoluminescence on twophoton absorption in the course of reradiation in undoped gradedgap AlxGa1xAs solid solutions was studied.


The optimization of lowtemperature growth conditions for a gradedcomposition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure.

