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Behavior of graded-gap detectors of ionizing radiation under irradiation with alpha particles
      
The effect of irradiation with α particles on the current and optical responses of graded-gap AlxGa1-xAs/GaAs detectors of α particles and X-ray photons is studied.
      
Graded-gap Si1-xGex alloys (0 ≤ x ≤ 1) can be used for the fabrication of photoelectric devices sensitive in the visible and near-IR regions.
      
Electroluminescence of graded-gap structures with blocking and ohmic contacts
      
Special features of the electroluminescence of uniformly doped graded-gap structures with blocking and ohmic contacts are studied theoretically.
      
A graded-gap photoelectric detector for ionizing radiation
      
A heterostructure consisting of a graded-gap p-AlxGa1-xAs layer on an n-GaAs substrate is studied in relation to its role as a photoelectric-response detector of X-ray photons and α particles.
      
Specific features of photoconductivity spectra of the CdTe/CdHgTe epitaxial graded-gap heterostructures
      
Based on studies the structural and photoelectric properties of CdTe/CdHgTe graded-gap heterostructures, it is found that the metallurgical interface between the materials, which is located in the structure bulk, is enriched with structural defects.
      
It is shown that the radiative recombination in such structures is determined by the direct band-to-band transitions and transitions to a deep level if the crystallite bulk features the graded gap.
      
Capacitance-voltage characteristics of the p-Cd0.27Hg0.73Te-based structures with a wide-gap graded-gap surface layer
      
Capacitance-voltage characteristics of the structure In-SiO2-(graded-gap layer Cd0.71-0.27Hg0.29-0.73Te)-p-Cd0.27Hg0.73Te-GaAs are investigated at temperatures of 80 K and higher.
      
The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on Eb.
      
In the experiments, graded-gap Cd xHg1 - x Te samples grown on GaAs and Si substrates by molecular beam epitaxy were used.
      
The obtained experimental data are the first results on the observation of stimulated radiation from graded-gap Cd x Hg1 - x Te structures on Si and GaAs substrates at these wavelengths at room temperature.
      
Waveguide regimes of a graded-index planar waveguide with cladding
      
Growth and photoelectric properties of graded-gap Si-(Si2)1-x(GaP)x heterostructures
      
Analyses of the results of the X-ray studies and photoelectric properties of obtained solid-solution epitaxial layers indicate that the grown graded-gap (Si2)1-x(GaP)x layers have a high structural quality.
      
Operator dispersion relations for graded-index and multilayer step-index isotropic circular fibers are derived.
      
Long-wavelength uncooled sources of λ=5-6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy
      
 

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