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applied voltage
The effects of the process variables, i.e., frequency, temperature of the electrolyte, applied voltage and treatment time, have been experimentally studied.
      
Increasing applied voltage resulted in the increase in the amount of O3 generated by streamer discharge.
      
In the aluminon-based compositions, the dependence of EL on the diode storage time both with and without an applied voltage was measured.
      
The applied voltage was ~15 kV and the capillary temperature was kept constant at 25°C.
      
A relation between the applied voltage and Raleigh number is presented.
      
The dependence of the electrode process acceleration due to natural convection on the applied voltage is found.
      
Since such a system possesses percolation properties the above results have been applied to the description of the charging process after a stepwise change of the applied voltage.
      
Depending on the electrochemical processes in the gap, various dependences of the tip-sample distance on the current and applied voltage can be expected.
      
Maximum reduction is 7 mm of water at an applied voltage of 1.0 V (0.379 V vs.
      
The photoelectric properties of the structures are studied, the carrier transfer mechanism is established, and the influence of the applied voltage on the carrier transfer mechanism is demonstrated.
      
The variation is examined of photoluminescence spectrum and resistivity with oxidation time subject to applied voltage.
      
It is found that oxidation rate grows with applied voltage.
      
The most important are the systematic errors associated with the estimation of the insulator capacitance and the identification of the relationship between the semiconductor surface potential and the applied voltage.
      
The effect of memorizing the structural states in a ferroelectric liquid crystal (FLC), known as biand multistability, is based on the existence of a domain structure that changes its properties under the action of an applied voltage.
      
The effect of the boundary conditions at the vessel walls on the dependence of the amplitude of the standing wave on the applied voltage is estimated.
      
It is shown that the dependences of the potential on the quantum well number and the electric field from the applied voltage are oscillatory.
      
It is shown that there exist three types of dependences of the conductance of the structure on the applied voltage, which are distinguished by the position of the characteristic features on the voltage axis.
      
When the applied voltage is varied, the ideality factors of Schottky barriers exhibit oscillations due to the tunneling of holes through discrete levels in quantum dots.
      
It is shown that, to achieve the threshold values of excimer concentration, a high preionization level and the shape of the applied voltage pulse are important factors.
      
The effect observed is attributed to thickness variation of the space-charge layer under the effects of the applied voltage.
      
 

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