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bulk si
After irradiation with high doses (~103 displacements per nanocrystal), amorphization was observed, which is not characteristic of bulk Si.
      
A number of effects in metal/(tunnel-thin SiO2)/p+-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied.
      
The Direct Current (DC) characters measured by HP 4155B indicate that the maximum saturated transconductance is twice bigger than that of bulk Si PMOSFET.
      
After annealing at elevated temperatures, the clusters coalesce and inhomogeneous surface morphology of the NiSi2 is obtained in the case of the deposition onto the clean surface, due to immediate Ni diffusion into the bulk Si.
      
Under forward bias, the diodes emit infrared electroluminescence closely below the band gap of bulk Si.
      
The presence of TS in overconstrained amorphous solids like pure bulk Si is however not so well established.
      
A mid-infrared (8 - 22 μm) camera, equipped with a Hughes hybrid bulk Si:As array detector of 10 × 64 pixels was developed for the 1.5 m Italian Infrared Telescope (TIRGO).
      
A mid-infrared (8-22 μm) camera, equipped with a Hughes hybrid bulk Si:As array detector of 10×64 pixels was developed for the 1.5 m Italian Infrared Telescope (TIRGO).
      
TheS-parameters dropped significantly to 0.53 by crystallization of the thin film at 800 °C for 10 seconds, which was almost the same to the value observed in bulk Si (100) substrate.
      
Para-selectivity of ZSM-5 zeolites with similar bulk Si/Al ratio, but different particle size and surface Al concentration has been investigated in toluene disproportionation.
      
The acidity and catalytic properties of aluminosilicate mesoporous molecular sieves with the MCM-41 structure and bulk Si/Al ratios in the 10-60 range have been investigated.
      
We determine the minimum-energy structures of these clusters at different sizes embedded in bulk Si and calculate the energy and charge state of each cluster within density-functional theory.
      
Pressure-induced polymorphous crystallization in bulk Si20Te80 glass
      
The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa.
      
The gate oxide integrity on an ITOX-SIMOX wafer was found to be superior to that of bulk Si wafers, indicating the wafer surface was improved by the high temperature annealing.
      
Data from the device suggest that the spin-polarised electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.
      
Double glass transition and double stage crystallization of bulk Si20Te80 glass
      
A comparison of photoluminescence data for erbium implanted samples of bulk Si, porous Si, and quartz indicate that quantum confinement likely enhances the erbium IR luminescence efficiency.
      
References 27 and 30 use more extensive and higher quality empirical parameterizations for bulk Si than the sp3s? model used by us.
      
As a second exmaple, an electron mobility anisotropy ratio of ≈4.5 is derived from the QMSA treatment of the Hall data for bulk Si samples.
      
 

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