circuit element 
Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Element


Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit element


The limiter comprises a seriesconnected dc circuit element immersed in liquid nitrogen.


It is shown that the properties of such a circuit element differ greatly from those of a conventional MIM diode.


Current can be transferred to the load of an inductive energy storage device by rapidly increasing the inductance of a circuit element connected in parallel with the load.


Based on the infiuence of circuit element tolerances to thekfault diagnosis, a method of fault diagnosis is presented which is called minimum tolerance estimation algorithm and has clear physical meaning.


A slot resonator in a unilateral fin line is the basic circuit element that is extensively used as a building block in the design of finline filters.


The results of a numerical experiment, using twostep vector relaxation, on transport of mobile charge carriers in an integrated circuit element with injection are presented.


The stability of the stationary solution of the thermistor as a circuit element is studied using a Liapunov functional and the HaleLaSalle invariance principle.


When negative values for k were employed the circuit element offered a controlled impedance range of 1:1000 and was stable to at least 1.5MHz, providing that low source impedance values were used.


The relative areas are confirmed by the magnitudes of the circuit element components.


This paper chronicles the accumulation of knowledge about the electrodeelectrolyte interface as a circuit element.


Transient Response Testing (TRT) has been shown to be a viable technique for determining the functionality of a linear circuit element [1] [2] [3] [4].


This paper presents a lowlevel treatment of the nonlinear dynamics encountered in logdomain structures, by means of a nonlinear circuit element termed a Bernoulli Cell.


A novel and simple designprocedure is presented, which allows electricalparameters to be univocally related to the value ofeach circuit element and biasing value.


EM‐ANN models are then trained using physical parameters and frequency as inputs and equivalent electric circuit element parameters of finline discontinuities as outputs.


Once trained , the EM‐ANN models can simulate equivalent electric circuit element parameters of finline step, notch and strip very fast and efficiently.


The fundamental diagnosis way employs the comparative operation of each circuit element to determine whether the same logic state with abnormal IDDQ exists in normal logic state or not.


They are based on the Josephson tunnel junction, the only nondissipative, strongly nonlinear circuit element available at low temperature.


The described method yields a procedure requiring one measurement per equivalent circuit element only.

