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damaged layer
Influence of in situ photoexcitation on structure of damaged layer in GaAs (001) substrates implanted with Ar3+ ions
      
It is established that amorphization of the damaged layer proceeds via the formation and growth of clusters of radiation-induced point defects.
      
It is shown that the photoconductivity and edge absorption in mechanically polished and plastically deformed crystals are determined by the damaged layer.
      
This makes it possible to treat the damaged layer as a plane, introduced into the bulk, with an infinite surface recombination rate.
      
The data presented indicate that there is no damaged layer in the gate region of the structures, which is most strongly affected by the proton irradiation.
      
Experiments are described which show that under pulsed thermal loading conditions, a damaged layer is formed in SiC which inherits the typical erosion defects (craters, chips, microcracks).
      
Thickness of the damaged layer along the track made by a high-energy ion in polyimide
      
The thickness of the damaged layer along a particle track in polyimide is estimated by the method of thermally stimulated exoelectron emission and found to be ~30 nm.
      
It was established that in these MIS structures the rare-earth oxide-Si interface is abrupt and contains no extended damaged layer.
      
The integrated stress acting in the damaged layer has been studied as a function of the bombardment dose.
      
Current-voltage characteristics indicate the formation of a junction between the crystalline and the damaged layer.
      
After 1.5 J/cm2 irradiation the damaged layer reorders partially, while for about 2.0J/cm2 the surface single crystal becomes polycrystalline.
      
Reordering of the damaged layer occurs for energy density irradiation above 0.6 J/cm2.
      
The thickness of the damaged layer estimated from the positron data was compared with the mean depth of the implanted ions calculated by the TRIM code.
      
From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250?nm for the damaged layer and bulk of the wafer, respectively.
      
It has been assumed that for sufficiently low frequencies and far away from the damaged layer, the reflected and transmitted waves are plane waves.
      
These studies indicate that whereas in fused quartz the damaged layer recovers completely, inα-quartz there is a residual amorphization even after annealing.
      
An interpretation of field measurements shows that the compressive ice load is far from uniform; indeed, most of the load is transmitted through small areas of intense pressure characterized by a highly damaged layer.
      
Cracking patterns for a specimen with a failed inclusion and for a damaged layer of a geomedium in shear, as well as for a sandstone specimen in compression, were obtained.
      
Annealing this sample at 873K indicated partial recovery of the damaged layer.
      
 

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