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metallization
Simulation of the metallization of a fragment of a deoxyribonucleic acid molecule with gold nanoparticles
      
Qualitative gas dynamic model of the laser-electric metallization of holes in dielectrics
      
A gas dynamic model of the laser-electric hole metallization process is considered.
      
The values of metallization pressure are calculated for both infinite crystals and nano-size samples.
      
The dimensional dependence of metallization pressure is revealed, namely, the dependence of the value of phase transition pressure on the initial size of crystal.
      
Transmission spectra indicate that the NaCl surface undergoes metallization when treated with a high-frequency discharge and a rarefied hydrogen flame.
      
The metallization kinetics and peculiarities of metal distribution inside nanopores at large values of A are described (A = h/d is a geometrical factor or an aspect ratio, where h and d are the pore's depth and diameter).
      
The thermal stability of the metallization system during the formation of the ferroelectric film was investigated.
      
Contact TiSi2and Barrier TiN Layers for ULSI Multilevel Metallization
      
New VLSI Multilevel Metallization Technology Using Polyimide Insulation
      
The first part is presented of a review that summarizes the results of 20-year experimental research into CVD thin films of borophosphosilicate glass intended to serve as the premetal dielectric in multilevel metallization systems.
      
The second part is presented of a review that summarizes the results of the 20-year research into CVD thin films of borophosphosilicate glass intended to serve as the premetal dielectric in multilevel metallization systems.
      
Testing the electromigration resistance of Al metallization patterns by electrical-resistance measurement
      
The results are presented of an experimental evaluation of electromigration resistance for two types of Al metallization pattern used in the ICs of the 1554TBM and 1594T series.
      
Horizontal nonuniformity, due to the metallization pattern, is shown to disappear on a timescale comparable with the laser pulse width for most practical ICs, as a result of lateral flow of excess carriers by diffusion and drift.
      
When this is the case, the influence of the metallization pattern is found to be fully determined by the area of metallization relative to the over-all chip area.
      
It is demonstrated that this approach indeed alleviates the horizontal nonuniformity of equivalent dose rate related to the metallization pattern.
      
Controllability of the electrochemical potential makes metallization of the materials considered possible.
      
Possible relation between optical breakdown and metallization of extremely pure transparent dielectrics
      
The compression of liquid argon up to a density of 7.3 g/cm3 did not show any clear anomalies associated with a structural transition or metallization.
      
 

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