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silicon migration
Silicon migration during MBE growth of doped (A1, Ga)As films
      
Silicon migration during MBE growth of (Al, Ga)As and (Al, Ga)As/GaAs or AlAs/GaAs superlattices has been studied by electrochemical C-V and secondary ion mass spectrometry (SIMS) concentration-depth profiling.
      
On the basis of C-V, SIMS and TEM data we propose that silicon migration occurs as the result of a concentration-dependent diffusion process.
      
We observe that nitrogen implantation, along with the production of titanium nitride, induces silicon migration into the film.
      
Defects in the tungsten barrier were found to result in silicon migration to the front surface and gold migration toward the substrate at temperatures between 550°C-700°C .
      
Moreover, sample covering was not enough to prevent silicon migration from the quartz tubing to the composite.
      
This indicates that a silicon migration occurs leading to the formation of siliceous islands and aggregates.
      
 

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