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junction
With the substrate and the well connected externally with one another, the well-substrate junction serves as a third collector.
      
In silicon bipolar junction transistors, electrostatic discharge (ESD) is known to accelerate the degradation of the current gain factor β, which follows a pattern similar to that caused by thermal stress or ionizing irradiation.
      
The dynamics of dopant diffusion in forming a pn junction is investigated theoretically for an epilayer-substrate system.
      
On this basis, requirements for the depth profile of the diffusion coefficient are defined in respect of the junction abruptness and depth.
      
Further, the optimal diffusion time is determined in terms of striking a balance between the doping uniformity in the epilayer and the abruptness of the junction.
      
Submicrometer josephson junction as a sensor of current states in a mesoscopic superconducting structure
      
The second component represents the forced vibrations of the junction of the subsystems, where the external forces are taken equal to zero and only the reaction forces obtained in solving the first auxiliary problem act at the surface S.
      
The theorem is applied to the problem on the reflection and transmission of elastic waves through a junction of two media.
      
The A/B ring junction is quasi-trans, while the B/C and C/D ring systems are trans fused about the C(8)-C(9) and C(13)-C(14) bonds, respectively.
      
The A/B ring junction is quasi-trans, while ring systems B/C and C/D are trans fused about the C(8)-C(9) and C(13)-C(14) bonds, respectively.
      
Different dependences of the order parameter on the momentum directions in the interior of the superconductors and different orientations of the crystal axes relative to the junction plane are considered.
      
A nonlocal integrodifferentical equation describing the electrodynamics of a Josephson junction between superconductors of finite thickness in the direction of the magnetic field is derived.
      
The width of the junctions is much larger than the mean free path of a single fluxon, with the length of the path determined by energy dissipation in the junction.
      
Explicit analytic expressions are derived for the maximum supercurrent in the junction and the low-voltage asymptotic behavior of the current-voltage characteristics.
      
We derive the basic equations of nonlocal Josephson electrodynamics, valid for any ratios of the characteristic scale of phase-difference variations and junction thickness.
      
In this case the equation describing the viscous flow of vortex lattices in magnetically coupled films is the same as the equation of the resistively shunted Josephson junction model.
      
Influence of structural disorder on the current-voltage characteristic of a quasi-one-dimensional tunnel junction
      
On the current-voltage characteristic of a Josephson junction with a high critical current density
      
Electromagnetic waves in the nonlocal electrodynamics of an oblique Josephson junction of finite thickness
      
The new geometry for an oblique Josephson junction of finite thickness along the magnetic field is considered and a nonlocal integro-differential equation describing the dynamics of the phase difference is derived.
      
 

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