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absorption band
A retinal analog in which the β-ionone ring is replaced by ferrocene moiety forms a stable chromoprotein with the main absorption band at 483 nm and a shoulder near 590-610 nm.
      
For 5 min irradiation, the photochemical activity in the absence and in the presence of dithionite decreased by 35 and 72%, respectively (this was accompanied by an irreversible bleaching of the pheophytin Qx absorption band at 542 nm).
      
Induced Absorption Band of Holotransketolase and Its Interpretation
      
As regards the new absorption band induced by ThDP binding, its nature, until recently, remained unknown.
      
Coherent oscillations were studied in the kinetics at 935 nm (P* stimulated emission band), at 1020 nm (BA- absorption band), and at 760 nm (HA absorption band).
      
It was shown that electron transfer processes monitored by the 1020-nm absorption band development as well as by bleaching of 760-nm absorption band have the enhanced 32 cm-1 mode in the Fourier transform spectra.
      
Coherent oscillations were studied in the kinetics of the stimulated emission band of P* (935 nm), of absorption band of BA- (1020 nm) and of absorption band of HA (760 nm).
      
The maximum of the photooxygenation action spectrum coincided with the maximum of the oxygen absorption band at 1270 nm.
      
The absorption band of the reconstituted okenone was shifted to shorter wavelength compared with its position in vivo.
      
The proposed model provides a simple interpretation of the shift observed for the luminescence excitation band with respect to the corresponding absorption band.
      
It is found that the absorption band at 400 nm has a vibrational structure.
      
In all the glasses studied, two new centers belonging to the tin dopant in the SiO2 network are revealed in addition to the well-known oxygen-deficient center with the absorption band at 4.9 eV.
      
One new center is associated with the absorption band at 5.9 eV and the photoluminescence bands at 2.7 and 3.6 eV, whereas the other center is characterized by the absorption band in the range of 4.56 eV and the photoluminescence band at 2.95 eV.
      
The origin of a new center responsible for the absorption band at 360 nm is elucidated.
      
The photoluminescence spectra of sulfur-doped silica glass upon excitation into the absorption band at 203 nm and a temperature of 10 K are investigated.
      
The photobleaching of the absorption band associated with the hole-type centers in a gamma-irradiated glass of the K2O-PbO-SiO2 system is investigated by photometry.
      
It is established that the absorption band at ~420 nm, which is attributed to Fe3+ ions, is very sensitive to beta and gamma irradiation.
      
It was shown that γ-irradiation of thiosemicarbazide at room temperature resulted in the appearance of a yellow color due to the absorption band with the maximum at 440 nm.
      
Heating the irradiated sample up to the temperatures above 400 K leads to a simultaneous decrease in intensity of the absorption band and the ESR signal.
      
The intensity of an optical absorption band of the films with λmax~ 420-440 nm increased proportionally to the radiation dose absorbed by an aqueous micellar solution.
      
 

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