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insensitive
    PARASITIC INSENSITIVE SWITCHED-CAPACITOR THREE-PHASE OSCILLATORS
    寄生不灵敏的开关电容三相振荡器
    Designing Switched-Capacitor Active Filters Insensitive to Parasitic Capacitance
    对寄生电容不灵敏的开关电容有源滤波器的设计
    Design of Parasitic-capacitance Insensitive Switched-Capacitor Active FDNR Filters
    对寄生电容不灵敏的开关电容有源FDNR滤波器的设计
    The realisation of third order lowpass Butterworth in the current mode by using the second generation current conveyor(CCⅡ) is presented. With nonideal CCⅡs the denominator coefficients are slightly altered, however it can be precisely compensated by suitable design. The network active sensitivities are practically insensitive.
    利用第二代电流传输器,提出了三阶低通巴特沃思电流模式实现电路⒚通过适当的设计来补偿CCII的非理想特性对分母系数的改变⒚网络的有源灵敏度实际上是不灵敏的
    An unit buffer is adopted to design frequency dependence negative resistance(FDNR) element of switched-capacitor(SC) which is insensitive to parasitic capacitance. SC uses the element to simulate LC low pass filter of ellipse function.
    采用单位缓冲器设计对寄生电容不灵敏的开关电容 (SC)频率相关负电阻 (FDNR)元件 ,利用该元件对椭圆函数式 LC低通滤波器进行 SC模拟。
    An unit of buffer is adopted to design frequency dependence negative resistance (FDNR) element of switched-capacitor (SC) which is insensitive to parasitic capacitance. FDNR is used in SC to simulate LC low pass filter of ellipse function.
    采用单位缓冲器设计对寄生电容不灵敏的开关电容(SC)频率相关负电阻(FDNR)元件,利用该元件对椭园函数式LC低通滤波器进行SC模拟。
    For fabricating semiconductor optical amplifier of polarization insensitive, a structure of the active layer was designed that is strain compensation with alternate 4 compressive and 3 tensile strain quantum wells and lattice-matched barrier layer.
    为了制备偏振不灵敏的半导体光放大器 (SOA) ,将有源区设计为由 4个压应变、3个张应变阱层及晶格匹配的垒层InGaAsP交替组合而成的应变补偿结构。
    Changing the value of the thermo-optic coefficient of the fiber core and cladding material and selecting the different cladding modes, the LPFGs sensitive or insensitive the temperature can be designed and fabricated.
    适当调整纤芯和包层的热光系数,并选用不同的包层模,可以得到对温度灵敏或不灵敏的LPFGs。
    An active structure containing InGaAs compressive wells and tensile quai bulk layers is adopted to fabricate broadband polarization insensitive semiconductor optical amplifier.
    采用压应变InGaAs量子阱和张应变InGaAs准体材料交替混合的有源结构,研制了宽带偏振不灵敏的半导体光放大器.
 

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