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bulk si
    Both the theoretical simulation and experiment results show that the relationship betweenμeff and Eeff in strained-Si is similar to the one in bulk Si. The mobility reaches its maximum when Eeff equals to 2×105V/cm.
    理论分析和实验结果表明,应变硅载流子迁移率与横向电场Eeff的函数关系与体硅材料类似,峰值迁移率所对应的Eeff为2×105V/cm。
    Tests of total dose effects have been performed on the China-manufactured bulk Si MSI CMOS ICs irradiated by Co60 gamma-ray and 1.5MeV electron.
    本文报道了国产中规模体硅CMOS电路在~(60)Coγ射线和1.5MeV电子辐照下的总剂量效应的研究结果。
    Secondly, the operational mechanism of bulk Si SBSD-MOSFET device is simulated and its characteristics are presented in this paper with device simulation program DESSIS. The silulation result shows that there is great leakage current while its gate is in reverse bias in bulk Si SBSD-MOSFET. The leakage current consists of two parts: the thermionic emission from the source and the tunneling current from the drain.
    其次,本文通过二维模拟软件DESSIS模拟了体硅SBSD-MOSFET的基本伏安特性,模拟结果显示,体硅SBSD-MOSFET有着较大的反栅压泄漏电流,而反栅压泄漏电流包括两部分:来自源结的热发射泄漏电流与来自漏结的隧穿泄漏电流。
    The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future.
    在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。
    The aim of this paper is to give a flavor of the state-of-the-art SOI technology by discussing the synthesis of SOI wafers and the general interest of SOI circuits,the structure and performance of typical SOI devices. Critical questions related to the future of SOI are the raised,The article also addresses the challenges that SOI is facing in older to compete with bulk Si in the commercial areas.
    本文通过讨论SOI芯片的制作、SOI电路的特性、典型SOI器件的结构和性能阐述了SOI技术的现状,同时介绍了与SOI技术未来有关的一些关键问题.本文还强调了为了在商业领域与体硅材料竞争SOI材料面临的挑战.
    As a silicon integration technology in the 21st century, silicon on insulator (SOI) has become more and more attractive The superiority of SOI devices over bulk Si devices is analyzed in detail, with regard to parasitic capacitance, latch up effect, hot carrier effect, bulk effect and radiation effect Current research subjects of SOI technology are examined and its development trend in the future is discussed
    SOI技术作为 2 1世纪的硅集成技术 ,越来越受到人们的关注。 文章从寄生电容、闭锁效应、热载流子效应、体效应及辐射效应等几个方面详细讨论了 SOI器件对体硅器件的优势 ,并讨论了当前 SOI技术的研究领域和发展方向
    DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.
    通过局域注氧工艺 ,在同一管芯上制作了 DSOI、体硅和 SOI三种结构的器件 .
    In order to etch fine groove patterns in bulk Si CMOS FinFET's, a process technology using electron beam direct writing on the UV3 positive resist, which is deep-violate-sensitive, is investigated in the paper.
    为了在体硅CMOSFinFET中用等离子体腐蚀精细凹槽图形,研究了将电子束直写曝光用于原为深紫外光学曝光的UV3正性抗蚀剂的工艺技术;
    The DC characters meas ured by HP 4155B indicate that hole mobility μ p has 25% of maximum enhanc ement compared to that of bulk Si pMOSFET processed similarly.
    器件测试表明 ,与相同制备过程的体硅 p MOSFET相比 ,空穴迁移率最大提高了 2 5 % .
    Compared with the bulk Si BJMOSFET, because of the buried oxide in the SOI device, it doesn't have most problems of the bulk Si device and the superiority of BJMOSFET based on SOI over bulk Si BJMOSFET is analyzed in the bulk effect,hot carrier effect,parasitic capacitance,short-channel effect and latch-up effect.
    与体硅BJMOSFET比较,由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应,使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。
    Although the aging mechanisms and investigation methods are more sophisticated than those in bulk Si,the degradation of SOI MOSFETs does not appear to impede the development of high performance low-voltage ULSI SOI circuits.
    虽然失效机理比体硅器件复杂,但并不会阻碍高性能、低电压ULSI SOI电路的发展。
 

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