助手标题
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
共[12]条 当前为第1条到12条
 

相关语句
bulk-si
    Comparison of the characteristics of DSOI, SOI and bulk-Si MOSFETs
    DSOI,SOI和体硅MOSFET的特性测量比较
    The DSOI structure was investigated using a local oxygen imp lantation process to successfully fabricate DSOI, bulk-Si and SOI MOSFETs on th e same die.
    为了实现DSOI器件结构并且研究DSOI器件的特性,和SOI器件与体硅器件进行对比,采用新型的局域注氧工艺成功地在同一管芯上制作了DSOI、体硅和SOI3种结构的器件。
    A new method of preventing bulk-Si CMOS devices from latchup
    抑制体硅CMOS器件闭锁的新方法
    For single BULK-Si, SOI and DSOI MOSFET, this paper develops their thermal resistance models and analyses the analogous results accordingly.
    进而对体硅,SOI MOSFET器件,特别是DSOI MOSPET的热学特性进行数值计算,比较并分析了其数值计算结果。
    In addition the electrical advantages of the SOI devices over the bulk-Si devices remained in the DSOI devices because of the buried oxide layer below the drain and source region.
    由于DSOI器件漏、源区下方埋氧层的存在,在消除了SOI器件严重的自热效应和浮体效应的同时,保持了SOI器件相对体硅器件的电学特性优势。
    Therefore, the DSOI devices combine the advantages of SOI and bulk-Si devices as promising designs for high-speed, low-power applications. 
    DSOI器件成功地结合了SOI器件和体硅器件的优点,并且克服了两者的缺点,是一种很有希望的高速低功耗新器件。
    The numeric simulation of LDMOS and NMOS devices, as well as the experiment of inductors on bulk-Si substrate, demonstrate excellent performance of active devices and passive elements, which validates the feasibility of the compact integration technology for SOI RF IC.
    经过对LDMOS、NMOS的工艺、器件的数值模拟和体硅衬底电感的初步实验,获得了良好的有源和无源器件特性,证明这一简洁的集成工艺方案是可行的。
    In studying latchup window phenomena in bulk-Si CMOS devices,a new method for prevention of latchup has been discovered,which is called pseudo-latchup path method.
    在研究体硅CMOS器件的闭锁窗口现象时,发现了一种新的抗闭锁方法———伪闭锁路径法。
    The circuit can be used to prevent latchup in conventional bulk-Si CMOS devices.
    运用计算机仿真分析技术开发的抗闭锁电路,可以实现体硅CMOS器件的闭锁抑制。
    An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
    从体硅CMOS器件的闭锁效应入手,提出了抑制闭锁的一种新方法—伪闭锁路径法。
    A new method,pseudo-latchup path method, has been put forward that is based on latchup effects of bulk-Si CMOS devices .
    从体硅CMOS器件的闭锁效应入手,提出了抑制闭锁的一种新方法——伪闭锁路径法。
    Pseudo-latchup path method can be used to prevent permanent latchup,but it cannot be used to eliminate the dose rate upset of bulk-Si CMOS devices.
    伪闭锁路径法能够较好抑制体硅CMOS器件的永久闭锁问题,但不能避免辐射引起的剂量率扰动。
 

首页上一页1下一页尾页 

 
CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社