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bulk silicon
    Study on the High Temperature Properties of Bulk Silicon, SOI and SiC MOS Devices
    体硅、SOI和SiCMOS器件高温特性的研究
    PACKAGING OF WAVEGUIDE DEVICES BASED ON BULK SILICON MEMS TECHNOLOGY
    基于体硅微机械工艺的光波导器件封装技术
    Packaging of Micro Electro Mechanical Systems Based on Bulk Silicon Bonding and Film Sealed Technology
    用于微电子机械系统封装的体硅键合技术和薄膜密封技术
    CMOS FinFET Fabricated on Bulk Silicon Substrate
    体硅衬底上的CMOS Fin FET(英文)
    The Technology of the High Performance Accelerometer Based on Wet Etching Bulk Silicon
    基于体硅湿法的高性能微加速度传感器技术
    Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs 
    亚100nm体硅MOSFET集约I-V模型
    Bulk Silicon CMOS FinFET's Structure and Characteristics
    体硅CMOS FinFET结构与特性研究
    Fabrication of the Bulk Silicon MOEMS Optical Switch Array
    体硅MOEMS阵列光开关的制作
    The results indicated the specific detectivity of PCLT/P(VDF-TrFE) pyroelectric sensors based on porous silicon dioxide and PET plastic film substrates reached 4.2E6 and 3.4E7 cmHz1/2 W-1 respectively, about 1-2 orders of magnitude higher than that of the sensors on bulk silicon substrate formed under the same condition.
    PCLT/P(VDF-TrFE)/PET和PCLT/P(VDF-TrFE)/多孔氧化硅热释电传感器的探测率,比同样制备条件的体硅衬底传感器高1-2个数量级。
    Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology. 54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit.
    以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路. 对该电路在辐照后的恢复特性进行研究. 结果表明, S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路;
    Based on the above studies the application temperature ranges and the opplication prospects of bulk silicon, SOI and SiC MOS devices are suggested.
    在上述研究的基础上 ,提出了体硅、SOI和 Si C MOS器件各自所适用的温度范围和应用前景
    Most important methods to preparation of silicon on insulator are separation by implanted oxygen and smart cut of bulk silicon.
    注氧隔离法 (SIMOX)和体硅智能剥离法 (smart cut)是目前制备绝缘体上的硅 (SOI)材料的最重要的两种方法。
    Micro-vibration sensors fabricated by bulk silicon process have the advantage of high sensitivity and low noise compared with the surface micromachining.
    体硅工艺微振动传感器与表面工艺微振动传感器相比,具有灵敏度高、噪声低等优点.
    Design and Research of Technology for Bulk Silicon Micromechanical Optical Switch
    体硅微机械光开关的设计与制作工艺的研究
    Temperature Characteristics of Threshold Voltage of Bulk Silicon NMOST Working in Wide Temperature Range
    宽温区体硅MOST阈值电压温度特性的研究
    High Q-Factor On-chip Spiral Inductors for Bulk Silicon CMOS RF IC's
    体硅CMOS射频集成电路中高Q值在片集成电感的实现
    Micro-vibration sensors fabricated by bulk silicon technology
    体硅工艺微振动传感器的研制
    A Tunneling-Based Accelerometer in Bulk Silicon Processes
    体硅隧道加速度计
    Research on Bulk Silicon Etching for Piezoelectric Miniature Microphone and Capacitive Miniature Microphone
    用于压电和电容微麦克风的体硅腐蚀相关研究
    A method to make blazed silicon gratings is designed. The fabrication of (100) and (111) silicon wafer grating is performed by bulk silicon techniques. The surfaces of silicon gratings have been tested by AFM.
    设计了一种制作闪耀硅光栅的方法,利用体硅加工技术分别进行了(100)面硅片和(111)面硅片光栅的制作,对光栅的表面进行了测试。
 

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