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vertically
    EXPERIMENTAL STUDY OF VOID FRACTION IN VERTICALLY UPWARD AND DOWNWARD LIQUID-GAS TWO-PHASE FLOW AT LOW VELOCITY
    低流速气液两相流垂直向上和向下流动时空泡份额的实验研究
    1300×600mm Vertically Parted Flaskless Shot Squeeze Moulding Machine
    1300×600mm垂直分型无箱射压造型机
    Anomaly Characteristics of Strengthened Vertically Focused Electric Profiling
    强化垂直聚焦剖面法的异常特征
    Effect of Horizontal Viscoelastic Covering Layers with Vertically Gradually-Varying Properties on the Ground Motion Caused by P-SV Waves
    粘弹性垂直向渐变水平复盖层对P-SV波引起的地面运动的影响
    DIAGNOSIS OF MEAN MERIDIONAL CIRCULATION OFTHE MODEL ATMOSPHERE IN THE GCM WITH LOW RESOLUTION VERTICALLY
    垂直低分辨率GCM模式大气平均经圈环流的诊断
    A Vertically Integrated Bipolar Storage Cell in 6H Silicor Carbide for Nonvolatile Memory Applications
    非易失性存储器应用的一种6H-SiC垂直集成的双极存储单元
    A Study of the Steam/Liquid Dual phase Flow Steady State and Pulsation Characteristics in a Vertically Placed and Inverted U Shaped Pipe
    垂直布置倒U型管内汽液两相流稳态特性及脉动特性研究
    Well Test Method for Vertically Fractured Wells in Multilayered Reservoir
    多层油藏有限导流垂直裂缝井试井方法研究
    Residual nitrate accumulated in a range of 5~40 cm laterally and 0~60 cm vertically from the point source,increasing with the amount of fertilizer applying after harvest.
    收获后,残留硝酸盐分布在点源水平距离5-40 cm,垂直距离0-60 cm土体内,残留硝酸盐累积量随氮肥用量的增加而增加。
    FI value obtained is appropriate and ESI vertically and horizontally are averagely increased by about from 0.2 to 0.3.
    平滑指数(FI)值大小适中,水平和垂直边缘保持指数(ESI)平均提高了约0.2~0.3.
    A strained Si/SiGe HCMOS structure was presented,in which tensile strained Si was used in n-MOSFET,and compressive strained SiGe was used in p-MOSFET,moreover,n-MOSFET and p-MOSFET were stacked vertically with a common SiGe gate in this structure.
    提出了一种应变Si/SiGe异质结CMOS结构,采用张应变Si作n-MOSFET沟道,压应变SiGe作p-MOSFET沟道,n-MOSFET与p-MOSFET采用垂直层叠结构,二者共用一个多晶SiGe栅电极。
    The heat transfer of natural convection between air and micro-wires with outer diameters ranging from 39.9μm to 350.1μm,placed at horizontally and vertically,is experimentally investigated.
    对直径分别39.9~350.1μm的微细金属丝水平和垂直放置在空气中时的自然对流换热系数进行了实验测量。
    SEM images show most Ag(TCNQ) nanowires have grown uniformly and vertically on the substrate with diameters ranging from SO to 300 nm and the lengths from 2 to 50 μm.
    样品的XRD特征峰与Ag(TCNQ)目对应; SEM形貌显示纳米线几乎垂直基片生长,直径在50-300nm,长度在2-50μm.
    The width measurement is performed by two 2D top lighting sensors aiming vertically on both edges of the product.
    宽度测量是由两个2D顶部照射传感器垂直对准产品的两侧实现的。
    Analysis of Optical Coupling in Vertically Coupling Structure of Waveguide and Photodetector Absorber
    波导与探测器吸收层垂直耦合结构中的光学耦合分析
    NORMALLY INCIDENT INFRARED ABSORPTION IN VERTICALLY ALIGNED InGaAs/GaAs QUANTUM DOT SUPERLATTICE
    InGaAs/GaAs垂直对准量子点超晶格的正入射红外吸收
    STUDY OF VERTICALLY ALIGNING GROWTH OF SELF ASSEMBLED InAs/GaAs QUANTUM DOTS
    自组织InAs/GaAs量子点垂直排列生长研究
    Methods and Controls to Transfer Traversing Vertically in the Shield Construction
    盾构施工中导线测量垂直传递的方法与控制
    Nonlinear Evolution of Surface Waves for Vertically Free Falling Films
    垂直自由降膜流表面波的非线性演化
    CALCULATION OF THE THICKNESS OF PIPE WALL IN VERTICALLY LAID PIPELINE AND DISCUSSION
    垂直敷设管路壁厚计算公式的推导与讨论
 

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