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    E/D NMOS Voltage Reference
    E/D NMOS基准电压源
    Analysis and Application of Programmable Precision Monolithic Reference SW431
    单片可调精密基准SW431的电路分析及应用
    Investigation Into Precision CMOS Band-Gap Reference Sources
    高精密CMOS能隙基准源的研究
    A Computer-Assisted Analysis of the Temperature Control Circuit for Precision Reference Source LM199
    精密基准源LM199的恒温电路机辅分析
    Design and Fabrication of A CMOS Voltage Rerenence
    低温漂CMOS基准电压源的设计与试制
    Principle and Application of Bandgap Voltage Reference
    带隙型集成电压基准源的应用
    1/f Noise as Reliability Prediction for Subsurface Zener Reference Diodes
    亚表面齐纳基准二极管可靠性的1/f噪声预测方法
    The Design of the the Adjustable DC Reference Voltage Source
    可调直流基准电压源的设计
    A Specific Standard Voltage Circuit for CMOS Design
    用于CMOS设计的一种专用基准电压电路
    Simulated in HSPICE,the bandgap reference source exhibits a temperature coefficient lower than 4-ppm/℃ in the temperature range from-55 ℃ to 125 ℃,and two adjustable reference voltages are also obtained.
    在-55~+125℃温度范围内,通过HSPICE仿真验证,基准电压的温度系数不到4ppm/℃。 在此基础上,实现了可调节的基准电压输出。
    A novel current reference source based on subthreshold MOSFET's with high power supply rejection ratio(PSRR) is presented.
    基于亚阈值MOSFET,提出了一种新颖的高电源抑制比(PSRR)电流基准源。
    Especially,the method making signal from reference frequency of single- chip microcomputer is novelty,simple and agility.
    特别是本文提出的利用单片机为频率合成器提供不同的基准频率从而得到不同音频输出信号的方法,新颖简单、灵活方便。
    With only two compensating stage, the temperature coefficient of a conventional bandgap reference falls down from 15ppm/℃ to 2ppm/℃ over the -40℃ to 120℃ temperature range.
    在-40~120℃范围内,仅两级补偿就可以将某工艺条件下一种传统带隙基准的温度系数从15ppm/℃减小到2ppm/℃。
    Experimental results for the hard fault set of the ISCAS-89 benchmark circuits show that the proposed method is a very efficient compression method.
    针对ISCAS-89基准电路硬故障集的实验结果表明,该方法是一种非常高效的压缩方法。
    A bandgap voltage reference circuit with good stability and high accuracy is designed in this pa- per.
    设计了一种具有良好稳定性和高精度的带隙基准电压源电路。
    The HSPICE simulation results show that the circuit can obtain a stable output volt- age with a PSRR of 79 and a temperature coefficient of 17×10~(-6)/℃over the temperature range from-55 to 125℃when the supply voltage is 3.3 V.
    HSPICE仿真结果表明,在电源电压V_(DD)=3.3V时,在-55℃~125℃的温度范围内,电路得到一个温度系数仅为17×10~(-6)/℃,电源抑制比(PSRR)为79dB的带隙基准电压输出。
    Based on 0.6μm BiCMOS technology, a high performance undervoltage lockout circuit (UVLO) without the reference voltage and comparator is designed.
    基于0.6μm BiCMOS工艺设计了一种无需基准电压源和比较器的高性能欠压封锁电路(UVLO)。
    Besides, the self-stability of the bandgap voltage reference structure makes the UVLO can work stably.
    而且带隙基准电压源结构自身的稳定性决定了欠压封锁能够稳定工作。
    A 0.75 V band-gap reference,based on the first order temperature compensation and resistive subdivision technology,is constructed in the chip.
    利用一级温度补偿和二次比例电阻分压技术在内部集成了0.75 V带隙基准源,可在2.7 V到7.0 V的工作电压范围内提供350mA的恒定驱动电流.
    For ISCAS85 benchmark circuits, satisfactory leakage power reduction can be achieved, and the optimization speed can be accelerated greatly.
    针对ISCAS85基准电路的静态功耗优化结果表明,利用该模型能够取得令人满意的静态功耗优化效果,优化速度大大提高.
 

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