未完全匹配句对     The two-dimensional electron gas with high density formed at AlGaN/GaN heterostructure screens the impurity scattering and increases the electron mobility.     Al Ga N/Ga N异质结产生高密度的二维电子气 ,屏蔽了杂质和缺陷的散射 ,改善了低场输运性能。 短句来源     Electric parameters of double heterojunction multilayer structure epitaxy slice (depth, dope concentration, electric type etc.) were tested and analysed by ECV. Epitaxial slice parameters were measured.     本文介绍了利用ECV的方法测试分析双异质结多层结构外延片方法,在测试厚度、掺杂浓度、导 电类型等材料的结构参数过程中,解决了外延片参数不稳定时的测试方法。 短句来源     The nonisothermal energy balance model (NEB), including the effects o f heterojunctions and lattice heating, is used to model the AlGaAs/GaAs HBT, whi ch is implemented in a 2D device simulator.     本文探讨了包含异质结和晶格加热效应下非等温能量平衡模型(NEB),且将其用于AlGaAs/GaAsHBT的数值分析中,并在二维器件模拟器中实现。 短句来源     Progress in research of WBG semiconductor,SiC and GaN,is expounded to the point. Scientific problems about electro-material & -device of SiC and GaN are introduced,such as polytype of SiC material,piezoelectric of the heterostructure AlGaN/GaN,current collapse and trap phenomenon of the GaN device,as well as thawing phenomenon of SiC carrier while the temperature is rising,etc.     扼要地叙述了宽禁带半导体SiC和GaN电子材料和器件的发展状况,介绍了SiC多形体、AlGaN/GaN异质结极化效应、GaN器件的电流塌陷效应和陷阱效应、SiC和GaN器件的特征工艺问题(离子注入、金属化等)以及温度升高时SiC载流子的冻析效应等。 短句来源     Silicon-germanium hetero-junction bipolar transistor (SiGe HBT) was fabricated by a revised double-mesa polysilicon-emitter process.     制作的锗硅异质结晶体管(Si Ge HBT)的击穿特性很硬 ,击穿电压为 14 .5 V,在 VCB=14 .0 V下的漏电流仅为 0 .3μA; 短句来源     The reasons of deviation of base-emitter P-N junction relative to the AlGaAs/GaAs heterojunction in LP-MOVPE growth of AlGaAs/GaAs HBT were analyzed. The effect of growth parameters on the deviation was calculated. The optimum thicknesses of space layer were 1.0～1.5 nm, 3.0～4.0 nm and 13～15 nm for C, Mg and Zn dopant, respectively.     分析了MOCVDAlGaAs/GaAsHBT外延材料生长中基区、发射区异质结界面与P N结界面产生偏离的原因 ,计算了外延生长参数对结偏离的影响 ,得到了对于C、Mg及Zn作为P型掺杂剂时 ,使得结偏位为 0时所需生长的GaAsspace层厚度 ,它们分别为 1～ 1.5nm、3～ 4nm及 12～ 15nm。 短句来源     HgCdTe p + on n hetero junction material was grown by molecular beam epitaxy(MBE) and in situ doping, and HgCdTe p + on n hetero junction infrared focal plane arrays were fabricated by the process of wet etching, side wall passivation, side wall matelization, indium bump fabrication and hybridization etc.     采用由分子束外延(MBE)和原位掺杂技术生长的p+onn异质结材料,通过湿法腐蚀、台面钝化、台面金属化、铟柱制备和互连等工艺,得到了HgCdTep+onn长波异质结焦平面器件. 短句来源     A novel structure for microwave power SiGe HBTs is presented, which can improve the high frequency characteristics of devices by etching away the collector layers underneath the extrinsic base region and filling the resultant trenches with SiO 2.The simulation results of the novel and similar conventional structures are studied and compared.     提出一种新结构的微波功率SiGe异质结双极晶体管 (SiGeHBT) ,该结构通过在传统SiGeHBT的外基区下的集电区中挖槽并填充SiO2 的方法来改善器件的高频性能 . 短句来源     When the diode is under forward bias,the electrons injected via the Si n-p- junction diffuse to and are confined in the β-FeSi 2 particles due to the band offset. The storage charge at the β-FeSi 2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p--Si near the Si junction,which prevents them from nonradiative recombination channels.     当二极管处于正向偏置时 ,通过Sin p-结注入的电子扩散到 β FeSi2 并由于Si与 β FeSi2 之间的能隙差而受到限制 ,电荷在异质结的积累反过来阻挡了电子的继续扩散 ,将电子局域化在靠近Sin p-结的 p- Si区 . 短句来源     The hole spin precession is controlled by the Rashba spin-orbit interaction in 2DHG formed in Ge channel modulation-doped structure.     在Ge沟道调制掺杂异质结构形成的二维空穴气中 ,空穴的自旋进动主要受Rashba自旋轨道相互作用控制 . 短句来源     HBTs,1 55μm MQW-LDs,and related transmitter OEICs were grown on semiinsulated InP substrates by LP-MOCVD.     为了生长制作器件所需的外延片 ,采用低压金属有机物化学气相沉积方法在半绝缘InP衬底上生长了InP/InGaAs异质结双极晶体管 (HBT)结构、1 5 5 μm多量子阱激光二极管以及两者集成的光发射光电集成电路材料结构 . 短句来源     This paper reviewed the recent progress in SiGe materials and SiGe heterojunction bipolar transistors (HBTs),including their structures,characteristics,fabrication technologies,advantages and future directions.     本文回顾了siGe材料和SiGe异质结双极晶体管的最新研究进展,包括它们的结构、性能、制作工艺、优点以及未来发展方向等。 短句来源     Organic/inorganic homoplastic heterojunction is a new kind of photoelectronic device with good compatibility, efficient photoelectric conversion and simple fabrication, so it can be widely used in the future.     有枳／无机同型异质结是一种新型的光电子元器件,由于它有制备工艺简单,一 致性和稳定性好,光电转换效率高,频响特性宽等优点,在光电子领域将有广泛的应用前景。 短句来源     After the organic material of PTCDA was deposited on the inorganic semiconductor of P-Si substrate to form organic/inorganic homoplastic heterojunction, the dark-current of ITO/PTCDA/P-Si/Al photoelectric detector is reduced effectively by various ways of technological process. The order magnitudes of the current is 10-9 A.     将有 机半导体材料苝四甲酸二酐淀积在10 Ω·cm的P-Si无机半导体片上,形成有机／无机同型异质结, 然后采用各种工艺处理方法有效的降低了它的暗电流,暗电流减小到了10-9A数量级。 短句来源     Microwave HBTs' development and application status,equivalent circuit models used in HBTs,its large and small signal modeling technique,parameter's extraction methods and research progresses are reviewed.     本文对微波异质结双极型晶体管 (HBT)发展及其应用现状、用于HBT器件的等效电路模型 ,以及HBT器件大、小信号建模技术、模型参数提取方法及研究进展进行述评 . 短句来源

 

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