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    Operating the EL device in air,the oxidizing of Al electrode can also decrease the operating life.
    另外,在空气气氛下工作,铝电极的氧化等对器件寿命的影响也很大.改变器件的结构,提高器件的发光效率,减小器件的工作电流,可以大大提高器件寿命。
    Considering both the amplitude and the rise time of the output pulse across the load, the characteristics of DBD with different structure parameters and physical parameters (length, area, doping and the stimulating source) were simulated.
    从该器件在负载上的输出脉冲幅度及上升时间两方面综合考虑,通过改变器件结构参数和物理参数(长度、面积、掺杂浓度、激励源等),模拟研究了不同激励源及不同负载情况下DBD特性的变化情况。
    Based on this,we further introduced a PVK or NPB hole-transporting layer (HTL),to make trilayer devices ITO/HTL/ZnSe/Alq_3/Al to investigate the influence of ZnSe layer on the emission of the trilayer devices by varying the device structure.
    在此基础上进一步引入有机空穴传输层(HTL),通过改变器件的结构,讨论了ZnSe对有机-无机异质结器件ITO/HTL/ZnSe/Alq3/Al电致发光特性的影响.
    Especially, the new PNSFLCDs exhibits a novel "V" shape E-0 curve without threshold which can make grayscales available.
    而且可以有效地改变器件的电光特性,并首次获得了新颖的无阈值“V”字型电光特性,使PNSFLCDs很容易实现灰度。
    3, The passband flattening design, which can relax the requirements on wavelength control for lasers and filters in a WDM system;
    3.输出频谱的平坦化设计。 设计改变了器件的输出频谱,很大的降低了对系统其它器件的要求。
    Improving the structure of the chip can greatly enhance the brightness of LED.
    实践证明,通过改变器件结构可以大大提高HB-LED的亮度。
    Only a single BSO-PROM device is needed to realize all the Boolean logic between two binary patterns. The sequential changes of the bias voltage (polarity and amplitude) are avoided,so that the logic operation speed with PROM is greatly raised.
    仅用单个 BSO—PROM(Bi_(12)SiO_(20)单晶普克尔效应光读出器件)便实现了两个二值图形间的所有 Boolcan 逻辑,而且不需要时序地改变器件的外加电压(极性和大小),从而大大提高了 PROM 用于光逻辑运算的速度。
    It is shown that the de- pendence of internal light-coupling on temperature is a main factor for changing the working state of the devices;
    结果表明:内部光耦合随着温度变化是改变器件工作状态的主要因素;
    When the hole transport layer of PVK is used, the efficiency of double layer device is 10 ̄100 times higher than the efficiency of single layer device, and the highest quantum efficiency is 0.15%(photons/electrons). The luminous efficiency is 0.08 lm/w, the brightness is changed as the thickness of the hole transport layer and emitting layer are modulated.
    实验表明,加入PVK空穴传输层后,双层的效率比单层提高了10~100倍,最高的量子效率达到0.15%,流明效率达0.08lm/W,并可以通过调整空穴传输层及发光层的厚度改变器件发光亮度。
    It was found that the B se gregation occurred during epitaxially grown SiGe base by MBE may drastically deg rade the current gain of the SiGe/Si HBT at room temperature and change its low temperature behavior.
    发现用 MBE生长的Si Ge基区中 ,在材料生长时 B杂质的上述行为会严重破坏器件的室温电流增益并改变器件的低温性能 .
    The performance of the device is systematically reviewed by changing the parameters of the device. The influence of the transient floating body on CMOS/SOI circuits is also studied and analyzed,taking a ring oscillator as an example. A device structure is proposed to control the floating-body effect as well as the optimum design of the parameters.
    针对 SOI器件中的瞬态浮体效应进行了一系列的数值模拟 ,通过改变器件参数 ,比较系统地考察了 SOI器件中瞬态浮体效应 ,同时也研究和分析了瞬态浮体效应对 CMOS/SOI电路 (以环振电路为例 )的影响 ,并提出了抑制器件浮体效应的器件结构和参数优化设计 .
    A novel MOLED was fabricated using mixed organic materials as lightemitting layer. By changing their weight ratio (from 1∶28 to 17∶1) the cavity were modulated subtly,which convinced us that by changing their weight ratio reasonably the color altering can be realized.
    制做了一种新型的有机电致微腔器件,将两种有机材料混合作为发光材料,通过改变NPB和Alq的重量比(从1∶28改变到17∶1),达到了调节腔长从而改变器件发光颜色的目的,且器件发光颜色不随所加电压变化;
    From the development of blue LEDs, we can realize that luminescent spectrum and quantum efficiency are improved dramatically by changing device structures, improving material qualities or using new type material.
    从其发展进程中不难看出,改变器件结构、提高材料质量或采用新型材料使GaN基蓝光LED的光谱质量和量子效率有了本质提高.
    PBNRT has photo-controlled current switching effect in the optical and electric mixed operating mode,and its “S” negative resistance characteristics can be modulated by two different controlled ways,using light and controlled voltage respectively.
    PBNRT在光电混合工作模式下具有光控电流开关效应 ,可通过光照和控制电压两种控制方式改变器件的S型负阻特性 .
    The gate-drain breakdown of a GaAsMESFET is one of the most important factors limiting its maximum output power and affecting its reliability. This paper describes the research for improving the breakdown characteristics of GaAsMESFET from changing the device structure, adopting the new material and passivating.
    栅漏击穿是限制GaAsMESFET输出功率并影响其可靠性的最主要因素之一,本文就改善GaAsMESFET击穿特性所进行的研究做了综述介绍,其中包括改变器件结构,采用新型材料和钝化等方法.
    BCP layer plas the role to regulate carrier compound area and change color. So the device performance will be improved by controlling the BCP thickness.
    BCP层起到了调节载流子复合区域和改变器件发光颜色的作用,因此控制BCP的厚度可以改善器件的性能。
    Further studies indicate that the output optical power in each output port of the device can be tuned by reducing the radii of the silicon rods in the photonic crystals.
    进一步研究表明,通过改变器件内部介质柱的半径,可以改变光在输出端的输出功率。
    The diffusion technology is used to fabricate the SOS device with different p-well depth and different base region width,and the irradiation method is used to shorten the minority carrier lifetime.
    通过杂质扩散工艺实验,试制了不同p区扩散深度和不同基区宽度的半导体断路开关二极管,利用高能电子束辐照方法改变器件中的少子寿命。
    Non-local transport characteristics of the deep sub-micrometer NMOS device are studied under electro-static discharge(ESD)stress.
    分析了深亚微米NMOSFET在ESD应力下的非本地传输特性,分析说明了速度过冲效应可以增大漏端电流,改变器件特性.
 

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