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novel devices
    NOVEL DEVICES AS WELL AS SUPER-THIN LAYER HETERO-EPITAXIAL MATERIALS AND SURFACE/INTERFACE INVESTIGATIONS
    新型器件及其超薄层异质外延材料和表面、界面研究
    The device structure design for nanometer CMOS is analyzed. Several altrnative novel devices adapting for this era are discussed systematically, including SOI MOSFET, Double-gate and surrounding-gate MOSFET, recessed channel MOSFET, dynamic threshold MOSFET and low temperature CMOS, which are leading us approaching the ultimate limit of MOS device development.
    分析了纳米CMOS器件结构的设计 ,讨论了用于纳米尺寸的新型器件结构 ,包括SOICMOS、双栅和环栅MOSFET、凹陷沟道MOSFET、动态阈值MOSFET以及低温CMOS ,它们可能把我们带至硅器件设计的最远极限。
    Basic concepts, research areas, sev eral important effects and novel devices of magnetoelectronics are reviewed. Som e recent hot spots and the future prospects of magnetoelectronics are proposed.
    简要介绍了磁电子学的基本概念、研究对象和几种重要效应 ,以及基于这些效应的几种新型器件的工作原理 ,提出了磁电子学研究中的几个前瞻性课题 ,对磁电子学的未来发展方向作了评述和展望
    With the advantages of small volume, light weight, high reliability and so on, millimeter wave solid device and module technology have played an important role in the field of millimeter wave technology. The developing course from diodes to MESFET, further to the novel devices such as PHEMT, HBT etc was presented in the paper. The progress of MIMIC and MMCM technology was also introduced here.
    毫米波固态器件及模块技术由于其体积小、重量轻、可靠性高等优势,已在毫米波技术领域逐步占据了重要地位,本文重点介绍了从雪崩管、耿氏管、隧道管等两端器件到三端器件MESFET,再到新型器件,如PHEMT,HBT等的发展历程,以及毫米波集成电路技术和毫米波模块电路技术的进展情况。
    Research advances in electronic devices and photoelectricity transition devices such as tunneling diode, heterojunction diode, varied capacitance diode, single electronic transistor, solar cell and light emitting diode(LED)using hydrogenated nano-crystalline silicon(nc-Si:H)films are reviewed in this paper. The relation ship between the performance of these devices and the structures of nc-Si:H films is analyzed. The advantages of these novel devices are pointed out.
    介绍了氢化纳米硅(nc-Si∶H)薄膜在电子学器件和光电转换器件(如隧道二极管、异质结二极管、变容二极管、单电子晶体管、太阳能电池、发光二极管)等方面的研究进展,分析了这些器件的性能与nc-Si∶H薄膜结构之间的关系,阐述了新型器件的优点。
    The photonic crystal is also named photonic bandgap(PBG)and used to describe the man-made periodic electrical structure with some PBG. Its theoretical basis is the electronic energy band theory(the electronics in semiconductors has the bandgap). Special attention has been paid to application of the materials with PBG structures in microwave engineering,and many novel devices have come out.
    光子晶体又称光子带隙,是指具有一定光子带隙的人造周期性电介质结构,其理论依据来源于电子能带理论(半导体中的电子存在禁带),人们对光子带隙结构在微波工程中的应用给予了特别的关注,PBG结构的材料在微波集成电路的应用中造就了许多新型器件
 

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