助手标题
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
共[20]条 当前为第1条到20条
 

相关语句
liquid phase epitaxy
    Growth of 1.3μm Double Heterostructure GaInAsP/InP by Liquid Phase Epitaxy
    液相外延生长1.3μm GaInAsP/InP双异质结
    Study on Growth of 1.55μm GaInAsP Double Heterostructure by Low Temperature Liquid Phase Epitaxy on n-InP(100)Substrates
    在n—InP(100)衬底上低温液相外延生长1.55μm GaInAsP双异质结构层的研究
    InAs0.96Sb0.04 infrared thin films were grown by liquid phase epitaxy on n-type(100) InAs substrate by using horizontally sliding multi-wells graphite boats.
    采用水平滑移石墨舟液相外延生长技术在n型(100)InAs衬底上生长了InAs0.96Sb0.04薄膜.
    A STUDY ON HIGH-QUALITY HIGH POWER InGaAsP/ GaAs LASERS GROWN BY LIQUID PHASE EPITAXY
    液相外延生长高质量大功率InGaAsP/GaAs半导体激光器研究
    Growth of Cr,Ca∶YAG by Liquid Phase Epitaxy
    Cr,Ca∶YAG的液相外延生长
    Spectra of Cr,Ca∶YAG Grown by Liquid Phase Epitaxy
    液相外延生长Cr,Ca∶YAG晶体的光谱特性
    STUDY ON INITIAL STAGE OF YBCO LIQUID PHASE EPITAXY GROWTH
    YBCO液相外延生长初始阶段的研究
    A Review on Physical and Chemical Studies of REBa_2Cu_3O_(7-δ)/MgO Liquid Phase Epitaxy Growth in Initial Stage
    REBa_2Cu_3O_(7-δ)/MgO液相外延生长初始阶段的物理化学研究
    Growth of Beta Barium Borate (β-BBO) Thin Fihns by Liquid Phase Epitaxy
    β-BBO薄膜的液相外延生长
    The growth of saturable absorber Cr 4+∶YAG crystals by liquid phase epitaxy (LPE) is reported. The absorption characteristics of this co-doped Cr,Ca∶YAG epilayer is analyzed.
    报道了可饱和吸收体Cr4+∶YAG的液相外延生长 ,对双掺杂Cr ,Ca∶YAG外延层的吸收特性进行了分析。
    A novel monolithic passively Q-switched microchip laser is presented with a microcavity by directly growing a thin Cr4+∶YAG film with saturable absorption on the surface of the laser medium Nd3+∶YAG by liquid phase epitaxy. Because of the homogeneous epitaxial process,a good interface property is achieved between active medium Nd3+∶YAG and saturable absorber Cr4+∶YAG.
    基于液相外延工艺,实现了一种结构新颖的单片式被动调Q微片激光器。 采用了在激光介质Nd3+∶YAG表面直接液相外延生长一层具有饱和吸收特性的Cr4+∶YAG膜的微谐振腔的结构,由于是同质外延生长过程,能够确保饱和吸收体与增益介质间(Nd3+∶YAG/Cr4+∶YAG)良好的界面特性。
    Growth of HgCdTe by Liquid Phase Epitaxy
    碲镉汞的液相外延生长
    Growth of Cr,Ca-doped Yttrium Aluminum Garnet Film by Liquid Phase Epitaxy and Its Optic Characteristics
    Cr,Ca:YAG的液相外延生长及其光谱特性
    The technology of the liquid phase epitaxy growing silicon single cry-stal thin layer is described in this article N-type silicon single crystalthin layers doped with Sn have been grown by isothermal liquid phaseepitaxy technique at 950 c Scaning electron microscope observation showthat the thickness of the layer grown by this method is homogeneousinterface between fhe layer and the substrat is distinct, The experimentalresuuets are good agreement with the works reported by other authors
    本文提出了液相外延生长硅单晶薄膜的工艺,选择Sn为熔剂,在950℃的温度下等温液相外延生长了掺锑的型硅单晶薄膜,扫描电子显微镜观察表明生长的膜厚度比较均匀,膜与基片的边界比较明显,试验的结果表明与国外发表的工作较好地一致。
    The phase diagram data of Al- Ga- Sb ternary system in the Sb- rich region have been determined by the experiment. The AlGaSb epilayers with good surface morphology have been obtained from Sb- rich solutions with the way of liquid phase epitaxy.
    经过多次试验获得了在富Sb状态下Al-Ga-Sb三元系相图数据,并且在富Sb状态下液相外延生长出了优良的AlGaSb外延层。
    High optical power CW operation has been achieved at the wavelength range 790~830 urn by n-channe substrate inner stripe laser arrays. The laser array is grown by low temperature liquid phase epitaxy on the p-GaAs substrate,CW optical power 32.3 mJ/s and CW threshold current of 135 mA were obtained.
    报导AlGaAs激光阵列的一些实验结果.利用低温液相外延生长技术在p-GaAs衬底上,制出了V沟衬底内条形激光阵列.波长在790~830nm之间,阈值电流135mA,室温连续功率32.3mJ/s.
    Abstract The effective segregation coefficient of (Hg,Cd)Te during the liquid phase epitaxy(LPE) period is derived and compared with the experimental data. Based on this, the influences of Hg partial pressure, liquid compositions, supercooling and cooling rate on the composition-in-depth profile of (Hg, Cd)Te liquide phase epitaxial films are analyzed.
    根据热力学理论推导出(Hg,Cd)Te液相外延生长过程中有效分凝系数的表达式并与实验结果进行比较,由此分析了Hg压、溶液组成、降温速度及过冷度等对(Hg,Cd)Te液相外延薄膜纵向组分分布的影响.
    it is reported that line and point Si liquid phase epitaxy methods can be realized on (111) Si substrates. 
    而用表面形貌较好但有微缺陷的衬底时,适当控制液相外延生长过程,则可以在硅(111)面可以实现单晶点外延生长。
    It has been applied to fiber current sensors. The basic characteristics of Bi-doped magneto-optic magnetic garnet films are discussed in this paper. Analysis method to obtain high temperature stable Ve and Liquid Phase Epitaxy (LPE) are also introduced.
    本文介绍了用于高压大电流测量的高灵敏度光纤电流传感器中使用的掺Bi磁光磁性石榴石薄膜的基本特性,获得高温度稳定性弗尔德常数Ve的分析方法以及掺Bi磁性石榴石薄膜的液相外延生长方法。
    The studies on initial stage of REBa2Cu3O7-δ (REBCO) liquid phase epitaxy growth on MgO substrate were reviewed.
    本文综述了RE(RE=Y,Nd)BCO高温超导体厚膜在MgO基片上液相外延生长(Liquid Phase Epitaxy,LPE)的初始阶段研究。
 

首页上一页1下一页尾页 

 
CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社