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trapping
    Investigation on Surface Trapping Effects of GaN-Based HEMT
    GaN基HEMT器件的表面陷阱充电效应研究
    Mutant Library Construction by Using of Promoter Trapping in Magnaporthe Grisea
    利用启动子陷阱技术(Promoter trapping)构建稻瘟病菌(Magnaporthe grisea)突变体库
    1. New promoter trapping vectors pEGFP-HPH and pCB1003-EGFP have been constructed which possess the marker hygromycin gene and a promoterless eGFP gene;
    1.构建了启动子陷阱载体pEGFP-HPH和pCB1003-EGFP,均具有具有潮霉素抗性基因和无启动子的eGFP基因;
    The density of interfa-cial states depends upon the hole trapping process. In the range of 1×10~(10)to 5×10~(11)cm~(-2)·eV~(-1),the midgap density of interfacial states is proportional to the density of holestrapped Interfacial states introduced by irradiation cannot be annihilated by injectingelectrons.
    辐照引进的界面态和空穴被陷阱俘获有关,在1×10~(10)~5 × 10~(11)cm~(-2)·eV~(-1)范围,禁带中央界面态密度正比于被俘获空穴的密度. 辐照产生的界面态不能由电子注入加以消除.
    The behavior of the trapping centers in B~+,P~+,As~+ implanted SiO_2 layers of MOSstructure has been studied after high temperature annealing.
    本文主要研究B~+、P~+、As~+离子注入的MOS结构经高温(>860℃)退火后的氧化层陷阱行为.
    The predominance of hole trapping was affirmed by 662keV137Cs γ -ray scanning on the detector.
    用~(137)C662keV的γ射线扫描技术从实验上再次证明了快中子辐射在探测器中产生空穴陷阱,导致能量分辨变坏。
    Ba-sed on the assumption of the exponential distribution of the gap state density,we obtained the characteristic temperature T_t,the trapping parameterNt (both discribing the gap state property),and finally the gap state density N(E)from the non-linear I-V curve,The value of N(E_F)obtained inthis way is about 2x1O~(15)/cm~3,ev.
    按隙态的指数分布由超线性 I~V 曲线确定出描述隙态的特征温度 Tt 和陷阱参量 Nt 从而测得 N(E),我们得到 N(E_F)约为2×10~(15)/Cm~3·ev.
    The low frequency noise of Hg_(1-x)Cd_xTe(x=0.27) photoconductors which has 1/f spectrum, is presented. The values of S_v/V~2 of various samples are found to vary with the applied electrical field. These results show that the noise is due to the trapping effect.
    Hg_0.73Cd_0.27Te光电导探测器的低频噪声频谱呈1/f关系,测得不同样品的S_v/V~2值随偏置电场变化而变化,说明陷阱效应引起载流子数起伏是主要的低频噪声源,只有表面状态较为理想的样品的S_v/V~2值才接近Hooge关系的计算值,迁移率起伏上升为主要的1/f噪声源.
    The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiO_xN_y) films are studied in the present work.
    本文研究热氮氧化硅(SiO_xN_y)薄膜在高场下的电子陷阱和被陷电子的释放。
    The effect of electric field modulation on OCRS (Oxide current Relaxation Spectroscopy)has been studied based on single trap charge trapping model.
    本文用单陷阱电荷俘获模型研究了电场调制效应对氧化层电流弛豫谱(Oxide CurtentRelaxation Spectroscopy)——简称 OCRS的影响.
    It is possible to get 29% efficiency by reducing wafer thickness and employing light trapping technology.
    采用减薄硅片衬底厚度和光陷阱技术可望使转换效率达到29%。
    The trapping energy of dislocation caculated from difference in the trap parameter between bainite and sorbitic is 28. 1KJ/mol.
    在电化学渗透法测量65Mn钢五种显微组织陷阱参数的基础上,用陷阱参数分离法得到下贝氏体中位错的陷阱能为28.1KJ/mol;
    A new dielectric loss peak was found near by 2MHz at room temperature for the sample in the absence of Bi2O3, the corresponding electron trapping level was about 0.18 eV, it was considered that the loss peak resulted from intrinsicdefect Zni .
    发现不含Bi_2O_3试样在室温附近出现一新的损耗峰,峰值频率在2MHz左右,对应的电子陷阱能级为0.18eV,分析认为是由于本征缺陷Zn_i所致。
    Trapping effects of the compensated shallow level dopants(P,As,Sb)in strained p Si 1-x Ge x layers at low temperatures are studied.
    研究了p型Si1-xGex应变层中补偿浅能级杂质(P、As、Sb)的低温陷阱效应。
    Charge trapping in the tunnel oxide is an intrinsic failure mechanism associated with E 2PROM.
    E2PROM失效的内在机理是由于隧道氧化层中的电荷陷阱
    The doping of 4- could increase the photographic sensitivity of the silver halide emulsion indicating that it was a shallow electron trapping dopant. When the doping amount was between 3.1×10-1—3.1×10-9 mol/g emulsion,wherever the dopant could be doped in any region of the grain the photographic sensitivity of the silver halide emulsion increased.
    当K4犤Ru(CN)6犦的掺杂量为3.1×10-8~3.1×10-9mol/g乳剂之间时,掺杂剂掺杂在乳剂的任意位置,乳剂感光度都有提高,表明K4犤Ru(CN)6犦是浅电子陷阱掺杂剂。
    Narrow band gap heterocycles and aromatic rings, such as benzothiadiazole, benzoselenadi~azole, 4,7 dithien 2 yl 2,1,3 benzothiadiazole, thiophenes and anthracene in less than 50% of molar ratio in the copolymer were incorporated as a trapping center.
    与咔唑共聚的窄能隙单体 ,如蒽 (ANT)、噻吩 (Th)、2 ,1,3 苯并噻二唑 (BTDZ)、2 ,1,3 苯并硒二唑 (BseDZ)和 4,7 二噻吩 2 ,1,3 苯并噻二唑 (DBT)在聚合物中含量小于 5 0 %时成为陷阱中心 .
    An experiment was designed to investigate the effects of the surface trapping processon the sheet resistance of the AlGaN/GaN film.
    设计了一种实验方法用以研究AlGaN/GaN外延表面陷阱充电效应对于薄膜电阻的影响,该效应与GaN基HEMT电流崩塌现象直接相关。
 

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