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led外延
    Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers
    蓝宝石基LED外延片背减薄与抛光工艺研究
    Effect of δ-Doping on Performance of GaN Blue LED Epitaxial Films on Si Substrates
    δ掺杂对Si衬底GaN蓝光LED外延膜性能的影响研究
    The protection effect on v volume source gas running-over, the storage effect on Ⅲ volume source gas shutting-off and the delaying, and the memory effect on Mg doped in AIGaInP LED epitaxial layer grown by MOCVD are discussed.
    详细分析了 MOCVD AIGaInP LED外延片中 V族源的空流保护作用、Ⅲ族源的存储效应以及 Mg掺杂的延迟和记忆效应。
    The source gas switch procedure is designed, and it is reasonable, practical, and useful for growing AlGaInP LED epitaxial layer with abrupt heterointerface, and without wide bandgap sandwich.
    设计出了合理实用的源气开关程序,它有利于生长无定带隙夹层、突变异质结界面的AIGaInP LED外延片。
    LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency.
    LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。
    The factors that take effect on the controlling accuracy are analyzed, combining software and hardware approaches for pressure stability and gas switching undisturbed are introduced, such as close-loop pressure controlling, difference pressure controlling, accurate flux measuring and controlling and compensating gas line design, so that high quality MQW blue LED epitaxial material is grown initially on domestic plant-size GaN MOCVD system (6片机).
    分析了影响压力控制精度的主要因素,介绍了采用软件、硬件结合的方法,通过闭环压力控制、差压控制、高精度流量控制和补偿气路设计等技术手段,实现高精度压力稳定性和无扰动气体切换,首次在国产生产型GaN-MOCVD(6片机)设备上生长出高质量的多量子阱蓝光LED外延材料。
 

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