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金属-半导体
    THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS
    金属-半导体多层超薄共格结构(LUCS)的电子结构
    Specific Contact Resistance of Metal-Semiconductor Ohmic Contact
    金属-半导体欧姆接触的接触电阻率
    MICROSCOPIC STRUCTURE OF METAL-SEMICONDUCTOR Pt/TiO_2 CATALYST SURFACE
    金属-半导体催化剂Pt/TiO_2的表面微观结构
    A MEASUREMENT METHOD OF METAL-SEMICONDUCTOR CONTACT RESISTANCE
    测定金属-半导体接触电阻的一种方法
    On the Measurement of Metal-Semiconductor Contact Resistance in Integrated Circuits
    集成电路中金属-半导体接触电阻的测试
    STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO_2 AND Pt-ZnO
    金属-半导体催化剂的相互作用的研究—Pt/TiO_2和Pt/ZnO界面结构变化对其化学行为的影响
    METAL-SEMICONDUCTOR TRANSITION AND SUPERCONDUCTIVITY IN La-Ba-Cu-O SYSTEM
    Ba-La-Cu-O体系的金属-半导体转变和超导电性
    A STUDY OF METAL-SEMICONDUCTOR CATALYST:HYDROGEN SPILLOVER ON Pt/SnO_2 AT ROOM TEMPERATURE
    金属-半导体催化剂的研究Pt/SnO_2上氢的室温溢流
    It is found that the resistivity of La0.67Sr0.33-xAgxMnO3 without Fe3O4 is small, and there is a metal-semiconductor transition of the electricity transport property in this temperature region;
    我们发现纯La0.67Sr0.33-xAgxMnO3的电阻率很小,在给定的温区出现电输运性质的金属-半导体转变;
    Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method
    蒙特卡罗方法模拟金属-半导体接触的直接隧穿效应(英文)
    Theoretical Calculation of B arrier Height of Metal-semiconductor Contacts
    金属-半导体接触势垒高度的理论计算
    Average-Bond-Energy and Fermi Level on Metal-Semiconductor Contacts
    金属-半导体超晶格中的金属费米能级和半导体平均键能
    The study of MBE metal-semiconductor and insulator-semiconductor heterojunction, the study of their property, as well as the surface study of MBE film have been developed.
    MBE金属-半导体,绝缘体-半导体异质结及其界面特性的研究和MBE薄膜表面的研究都有所发展。
    This paper describes the study of the processes of forming Ⅳ-ⅥPbSe metal-semiconductor Schottky barrier junction and the mechanism bywhich the chlorine,as an interface of Pb/PbSe,acts to increase the R_oAvalue.
    本文对形成Ⅳ-Ⅵ族PbSe 金属-半导体肖特基势垒结之工艺和为了提高该器件的R_0A 值,将氯化物作为Pb/PbSe 界面的机理作了研究.
    The temperature of metal semiconductor transition, T _ tran, decreases, and the peak value of resistance increases with increasing Ca vacancies. The temperature dependence of the resistance above metal-semiconductor transition temperature is simulated based on the polaron-resistance model.
    材料的金属 -半导体转换峰值温度 Ttran随 Ca缺位程度的增加相应减小而电阻峰值却增大 ,作者用极化子电阻模型拟合了金属 -半导体转换峰温度 Ttran以上的电阻温度依赖关系 ,发现 Ca缺位材料电阻的增大可能与局域波函数的衰减长度减小有关。
    Fex(In2O3)1-x granular films were fabricated by the radio frequency sputtering, and the structures and magnetic properties of nanometer ferromagnetic metal-semiconductor matrix Fex (In2O3) 1-x granular films have been studied.
    采用射频溅射法制备了纳米“铁磁金属-半导体基体”Fex(In2O3)1-x颗粒膜,并研究了其结构和磁特性.
    The value of the ideality factor of the heterojunction is 1.85 in the low bias voltage range of 0 V~0.3 V and 8.36 in the high voltage range of 0.3 V~0.8 V.The reason is the presence of the nonlinear metal-semiconductor contact and defects in the interface of heterojunction.
    计算了异质结的理想因子η,发现当异质结两端偏压在0 V~0.3 V的低压区域,理想因子为1.85,而在0.3 V~0.8 V的高偏压区域,理想因子为8.36。 解释了理想因子偏高的原因是由于金属-半导体接触以及ZnO纳米线与p+-Si界面存在缺陷。
    A METHOD TO DETERMINE THE SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR CONTACT——CIRCULAR RING STRUCTURE METHOD
    金属-半导体比接触电阻的圆环结构测试法
    Formation mechanism of interface charges in the metal-semiconductor superlattices
    金属-半导体超晶格中界面电荷的生成机理
    Catalystcharacterizations show that the plasma treatment produces novel metal clusters. Theseclusters are oxidized with calcinations in air. And a largely distorted metal-supportinterface is produced, inducing an enhanced metal-semiconductor interaction.
    催化剂表征证明,等离子体处理将负载的氯铂酸还原为特殊金属团簇,焙烧后金属被氧化,同时与载体形成扭曲的金属-载体界面,导致增强的金属-半导体相互作用,使得催化剂的物理化学性质得到改善。
 

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