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金属半导体
    This thesis expatiates all the physics of the SiC ohmic contacts models, which have been developed by experiments, include metal-semiconductor schottky contact theory, Nn heterojunction and nn+ theory.
    本文从金属半导体接触的实验过程入手,阐述了本文所建立的SiC欧姆接触模型所涉及到的半导体器件物理理论,包括金属半导体肖特基接触理论、Nn异质结理论和nn~+理论。
    In contrast to that for LCMO films,the metal-semiconductor transition temperature (TMS) for LCMO/YBCO/LCMO films is enhanced and strongly depends on the YBCO layer thickness.
    与LCMO单层膜相比,三层薄膜的金属半导体转变温度(TMS)被提高并且强烈依赖于YBCO层的厚度.
    Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
    肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
    Alloying was typically at a temperature 150℃--450℃ for 10 min. The best alloying temperature is 220℃ and contact resistivity exhibited about 6.7× 10-4Ω cm2. The interfaces of the metal-semiconductor have been studied by AES and XRD. We discussed the correllation between the contact resistivities and microstructures.
    研究了Ag/AuGeNi/n-GaSb在150℃一450℃下合金处理对欧姆接触的影响,最佳合金温度为220℃,此时接触电阻率为6.7×1O-‘Ωcm‘。用AES和XRD研究了金属半导体界面处的扩散及物相变化,并讨论了接触电阻率与微结构的关系。
    More attention has been paid to ultra-thin metal-semiconductor films due to its extensive and potential application in microelectronics.
    由于超薄金属半导体薄膜在微电子领域具有广泛应用前景,因而对它的研究也越来越深入。
    In consideration of semiconductor ceramic sensitive elements, the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact.
    针对半导瓷敏感元件 ,应用金属半导体欧姆接触原理 ,分析了半导瓷电极欧姆接触的表面吸附层和能带结构 ;
    The conductivity mechanism of metal-semiconductor ceramic contact is derived by using its volt-ampere character, thus it is concluded that the electronic tunneling effect and field emission are the important conductive process of the metal-semiconductor ceramic ohm contact.
    应用金属半导体欧姆接触的伏安特性 ,导出了金属半导瓷欧姆接触的导电机理 ,得出了电子隧穿效应和场发射是金属半导瓷欧姆接触的重要导电过程的结论
    Review was made on GaN based wide gap semiconductor material and devices,especially for p-type material manufacture,metal-semiconductor contact,material etching,etc.
    对GaN基宽禁带紫外探测器材料体系的研究进展进行了回顾,重点介绍了p型材料的制备、金属半导体接触、材料的蚀刻等。
 

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