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    TRANSPARENT CONDUCTING CADMIUM-TIN OXIDE FILMS DEPOSITED BY RF REACTIVE SPUTTERING FROM A Cd-Sn ALLOY TARGET
    射频反应性溅射Cd-Sn合金沉积透明导电Cd_2SnO_4薄膜
    THE EFFECT OF HEAT TREATMENT ON THE ELECTRICAL AND OPTICAL PROPERTIES OF Cd_2SnO_4 FILMS DEPOSITED BY RF REACTIVE SPUTTERING FROM A Cd-Sn ALLOY TARGET
    热处理对射频反应性溅射Cd-Sn合金沉积的Cd_2SnO_4薄膜电学和光学性质的影响
    In-situ Preparation and Microwave Surface Resistance of Superconducting YBCO Thin Films by Magnetron Sputtering from Powder Target
    YBCO超导薄膜的粉末磁控溅射原位制备及其微波表面电阻
    Study on a New Magnetron Target for Use in Depositting Iron-Magnetic Films
    一种用于淀积铁磁膜的新型磁控研究
    Study of Sputtering Target For Y—Ba—Cu—O SuperConducting Film
    Y—Ba—Cu—O超导薄膜溅射材的研制
    EXPERIMENTAL STUDY OF ABLATION CHARACTERISTICS OF Pd THIN FILM TARGET
    薄膜钯烧蚀特性的实验研究
    XPS Analysis of the Effect of the Target Composition on the Formation of Si-Cr-Ni-O Thin Films During Reactive Sputtering
    反应溅射中材成份对Si-Cr-Ni-O薄膜形成的XPS分析
    PREPARATION OF Bi_4Ti_3O_(12) FILMS BY RF SPUTTERING OF METAL AND METAL OXIDE COMPOSE TARGET
    金属与金属氧化物复合制备Bi_4Ti_3O_(12)薄膜
    SINTER OF THE STRONTIUM BISMUTH TANTALITE TARGET AND ANALYSIS OF THE THIN FILMS MICROSTRUCTURE
    钽酸锶铋陶瓷的烧结及其薄膜微结构分析
    RESEARCH ON SURFACE OXIDIZING PROCESS OF Nd THIN FILM TARGET
    Nd薄膜表面氧化过程研究
    PREPARATION OF LAMINATION FACTORS FOR W Mo COMPOSITE TARGET
    制备W-Mo复合时分层因素的探讨
    As sputtering power of Mo target was increasing,surface roughness of Mo/Si film was increasing,characteristic diffraction peak of Mo species became stronger and stronger,furthermore, soft X-ray peak reflectivity of Mo/Si multilayers first increased and then reduced.
    研究发现,随着Mo溅射功率的增大,Mo/Si多层膜的表面粗糙度增加,Mo的特征X射线衍射峰也增强,Mo/Si多层膜的软X射线峰值反射率先增大后减小。
    Through experiment,the pressing condition of MgF2 target is found.
    通过实验摸索,得出MgF2材的压片条件;
    Using sintered B4C as target material, ternary BCN thin films were synthesized by means of pulsed laser deposition assisted by nitrogen ion beam.
    以烧结B4C为材料、在氮离子束辅助下用脉冲激光沉积方法制备了三元化合物硼碳氮(BCN)薄膜。
    The influence of the target substrate distance,sputtering power and working pressure on the film thickness uniformity deposited by self-designed magnetron sputtering deposition equipment has been studied.
    在自行设计的磁控溅射沉积设备上,对薄膜沉积工艺中基间距、溅射功率、工作气压对膜厚均匀性的影响进行了研究,由连续光谱椭圆偏光仪SE800测量薄膜厚度。
    The magnet- optical films of TbFeCo/Si and TbFeCo/K9 were prepared on the Si and K9-glass substrates by magnetron sputtering system with SPS TbFeCo alloy target. The spectra of complex dielectric functions were measured by spectroscopic ellipsometry at room temperature.
    采用放电等离子烧结(SPS)TbFeCo合金,分别在Si衬底和K9玻璃衬底上磁控溅射制备了磁光薄膜TbFeCo/Si和TbFeCo/K9;
    (Tb_(0.3)Dy_(0.7))_(35)Fe_(65) film was prepared by DC magnetron sputtering with alloy target.
    采用直流磁控溅射法使用合金制备了(Tb_(0.3)Dy_(0.7))_(35)Fe_(65)薄膜。
    Microstructures and electrical properties of ZnO:Al (ZAO) films,grown on glass substrate by RF magnetron sputtering of ZnO target doped with Al2O3(3 wt% ),were characterized with X-ray diffraction and Hall effect measurement.
    利用射频磁控溅射ZnO:Al(3wt%)陶瓷材制备ZAO薄膜,利用X射线衍射仪和霍尔测试仪分析了不同衬底温度和工作压强对薄膜结构和电学性能的影响。
    Cu(In1-xGax)Se2 films with its Cu(In+ Ga)ratio being as high as 0.270:1 ,can be grown by selenizing the CIG precursors, which was deposited at the sputtering powers of 0.24 W/cm2 for CuIn target and 0.30 W/cm2 for CuGa target,respectively.
    在CuIn和CuGa合金的功率密度分别为0.24和0.30 W/cm2条件下制备的CIG前驱膜经固态硒化处理可获得Ca/(In+Ga)比高达0.270:1的CIGS薄膜。
    Through the measurement and analyses on the samples by four point probe method, Ultraviolet spectrophotometer, X-ray Diffraction and EDX on the ITO target, the conclusion was as follows: The niobium-doped ITO film's lowest resistivity could reach 2. 583×10- 4Ω·cm, the average transparence rate could exceed 75%.
    通过四探针测试仪、紫外分光光度计、X射线衍射 (XRD)及的电子能谱仪(EDX)对样品进行测试分析,得到以下结论:掺铌 ITO膜电阻率最小可达到2.583×10-4Ω·cm,平均透光率可达75%以上。
 

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