After annealing for recrystallization,the strength of 〈110〉∥RD fibers decreases greatly and then transform into 〈111〉∥ND recrystallized fibers. Therefore,the texture strength of 〈111〉∥ND increases greatly.
CW Ar+ laser irradiation was used to recrystallize a-Si film, and the grain was increased to more than 10×40μm2, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly.
以CW Ar~+激光对非晶硅再结晶得到了SOM(Silicon on Metal)多晶硅新材料。 其晶粒大小为10×40μm~2,杂质分布均匀,电学性能大大改善.
2. 7A04 alloy obtains the optimal combination of strength and ductility in such solid solution and recrystallize treatment: 470℃ ×5min+480℃× 12min, the contradiction on dissolution of overageing phases and growth of new grains was settled also by it. The tensile strength is 585MPa and elongation to failure is 17.6%.
Since amorphous layers are formed by implanting BF2 into silicon, implanted layers recrystallize using the solid phase epitaxial growth process during low temperature annealing (550℃) , and then the activated boron concentration as high as 85% can be achieved.
The results showed that there was no dynamic recrystallizing during each finishing pass; during 1 to 5 pass with plate thickness 51.6 mm reducing to 22.0 mm, the grain size decreased obviously to 10 μm from original 45 μm, and during 6 to 9 pass with plate thickness 22.0 mm reducing to 14.0 mm, the grain size decreased in a less degree to 7.5 μm from 10 μm.
The recrystallization temperature of IF steel with deformation ε= 1.2 is 650 ℃ by dilatometric testing with heating rate 200 ℃/h, but the results of in situ heating SEM study on IF steel (ε= 1.2) showed that due to surface effect no recrystallized grains were observed at 650℃,but with non-homogeneous nucleation produced the quick recrystallizing course at part grains were observed at more than 650 ℃ to 680 ℃.
After the crude product is recrystallized from tetrahydrofuran (THF), the final product is obtained with purity above 99%.
High-angle boundaries of growing recrystallized grains accumulate numerous vacancies which partly coagulate.
It is established that the samples recrystallized in a close volume under the on-board microgravity conditions "break off" from the container walls and touch the walls only in a few points.
These particles, which are located at the boundaries of growing recrystallized grains (twins of the original single crystal) occupying not more than 8% of the volume, impede the motion of grain boundaries and hamper further recrystallization.
Depending on the strontium concentration in the initial crystal, particles of the precipitated phases can substantially impede the growth of recrystallized grains.
Some of the rolled composites were annealed by recrystallizing to remove the work hardening of the matrix alloy.
On recrystallizing optical anisotropy increased and a plasmon peak developed.
K2NbOF5 · H2O and K2TaF7 were prepared through melting Nb2O5 and Ta2O5 respectively with KHF2 · 2H2O, followed by recrystallizing.
Ore in retrograde zones is again brecciated with galena further recrystallizing after destruction of prograde recrystallization.
In addition, it appeared that the presence of lignin tended to restrict the amorphous cellulose produced by milling from recrystallizing into Cellulose II, whereas it had no influence on the recrystallization into Cellulose I.