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再结晶     
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  recrystallization
     DEFORMATION AND RECRYSTALLIZATION IN (110) [001] SINGLE CRYSTALS OF IRON-SILICON ALLOY
     铁硅合金(110)[001]单晶体的形变和再结晶
短句来源
     THE EFFECT OF STRIP THICKNESS ON THE COLD-ROLLING AND RECRYSTALLIZATION TEXTURE OF ELECTROLYTIC COPPER
     纯铜薄带的厚度对冷轧及再结晶织构的影响
短句来源
     Deformation and Recrystallization of the Low Cobalt Ceramic-sealing Alloy
     低钴陶瓷封接合金的形变再结晶
短句来源
     Deformation and Recrystallization of the Low Cobalt Ceramic-sealing Alloy
     低钴陶瓷封接合金的形变再结晶
短句来源
     EFFECT OF COPPER ON THE RECRYSTALLIZATION TEXTURE OF COLD ROLLED LOW CARBON STEEL SHEET
     铜对低碳镇静钢冷轧薄板再结晶织构的影响
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  recrystallized
     CMOS/SOI Devices Fabricated on Ar~+ Laser Recrystallized Polysilicon Films
     Ar~+激光再结晶多晶硅薄膜制备CMOS/SOI器件
短句来源
     Structure & Properties of Cold-deformed and Recrystallized 1Cr18Ni9Ti Austenitic Stainless Steel
     1Cr18Ni9Ti奥氏体不锈钢冷变形与再结晶组织及性能
短句来源
     Prediction of recrystallized microstructure of Ti-15-3 alloy
     Ti-15-3合金再结晶组织的预测
短句来源
     The thermal deformation equation,dynamic recrystallization diagram and the relationship between the size of dynamic recrystallized grains and Zener-Hollomon parameter were obtained.
     测得试验用钢的热变形激活能为289.9 kJ/mol,并得出了其热变形方程,以及动态再结晶晶粒尺寸与Zener-Hollomon参数之间的关系和动态再结晶状态图。
短句来源
     After annealing for recrystallization,the strength of 〈110〉∥RD fibers decreases greatly and then transform into 〈111〉∥ND recrystallized fibers. Therefore,the texture strength of 〈111〉∥ND increases greatly.
     再结晶退火后,〈110〉∥RD纤维织构强度明显降低,转变为〈111〉∥ND再结晶纤维织构,因此〈111〉∥ND织构强度大幅度增加.
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  recrystallize
     In isothermal process after hot deformation, it was easy to recrystallize as the temperature was high 950 ℃, and the recrystallization didn't occurred as isothermal time was 30min at 750 ℃.
     在变形后的等温过程中 ,950℃以上 ,则易进行再结晶 ,而在 750℃时 ,等温 30min无静态再结晶发生。
短句来源
     CW Ar+ laser irradiation was used to recrystallize a-Si film, and the grain was increased to more than 10×40μm2, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly.
     以CW Ar~+激光对非晶硅再结晶得到了SOM(Silicon on Metal)多晶硅新材料。 其晶粒大小为10×40μm~2,杂质分布均匀,电学性能大大改善.
短句来源
     2. 7A04 alloy obtains the optimal combination of strength and ductility in such solid solution and recrystallize treatment: 470℃ ×5min+480℃× 12min, the contradiction on dissolution of overageing phases and growth of new grains was settled also by it. The tensile strength is 585MPa and elongation to failure is 17.6%.
     2.对于7A04合金固溶再结晶采用470℃×5min+480℃×12min工艺,解决了过时效相的溶解和再结晶新晶粒长大的矛盾,使两者达到较好的配合,合金的综合性能最好,强度和延伸率分别达到585MPa和17.6%。
短句来源
     The studied results showed that it was difficult to dynamic\|recrystallize as the hot deformation was below 950℃, because of dynamic precipitation.
     研究结果表明 :该钢在 950℃以下变形时 ,由于动态析出的作用 ,很难发生动态再结晶 ;
短句来源
     Since amorphous layers are formed by implanting BF2 into silicon, implanted layers recrystallize using the solid phase epitaxial growth process during low temperature annealing (550℃) , and then the activated boron concentration as high as 85% can be achieved.
     BF_2~+注入硅能形成非晶层,在低温(550℃)退火时,注入层以固相外延形式再结晶,B原子的激活率可高达85%。
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  recrystallizing
     ADIABATIC SHEARING AND DYNAMIC RECRYSTALLIZING IN 30MnCrNiMoB STEEL
     30MnCrNiMoB钢绝热剪切与动态再结晶
短句来源
     The migration activation energy of recrystallizing interfaces of 7 phase was 635kJ / mol.
     计算了γ相再结晶内界面迁移激活能为635kJ/mol
短句来源
     The fourth, the addition of minor Sc and Zr leads to increase the recrystallizing temperature.
     4.添加微量Sc和Zr能显著提高Al-Mg-Mn合金冷轧后的再结晶温度,再结晶起始温度提高120℃左右。
短句来源
     The results showed that there was no dynamic recrystallizing during each finishing pass; during 1 to 5 pass with plate thickness 51.6 mm reducing to 22.0 mm, the grain size decreased obviously to 10 μm from original 45 μm, and during 6 to 9 pass with plate thickness 22.0 mm reducing to 14.0 mm, the grain size decreased in a less degree to 7.5 μm from 10 μm.
     结果表明 ,精轧各道次均没有发生动态再结晶 ,在板厚 5 1 6mm轧至 2 2 0mm的 1~ 5道次 ,晶粒尺寸显著减小 ,由 4 5 μm降至 10 μm ,在板厚 2 2 0mm轧至 14 0mm的 6~ 9道次 ,晶粒尺寸减小不显著 ,由10 μm降至 7 5 μm
短句来源
     The recrystallization temperature of IF steel with deformation ε= 1.2 is 650 ℃ by dilatometric testing with heating rate 200 ℃/h, but the results of in situ heating SEM study on IF steel (ε= 1.2) showed that due to surface effect no recrystallized grains were observed at 650℃,but with non-homogeneous nucleation produced the quick recrystallizing course at part grains were observed at more than 650 ℃ to 680 ℃.
     用膨胀仪测定加热速度为 2 0 0℃ h形变量ε =1.2的IF钢的再结晶温度为 65 0℃ ,但扫描电镜(SEM)对该IF钢 (ε =1.2 )原位加热的试验结果表明 ,因表面效应 ,在 65 0℃未观察到再结晶晶粒 ,在 65 0℃到680℃之间产生非均匀形核 ,部分晶粒迅速发生再结晶过程
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  recrystallization
The results of the analysis show that the process of grain refinement can be described as a continuous dynamic recovery and recrystallization.
      
Strain accumulation can only be obtained when static recrystallization between passes could be suppressed.
      
The effect of NbC precipitates on suppressing recrystallization has been widely investigated, mostly focusing on the Zener pinning of NbC on grain boundaries.
      
In short inter-pass time, such as strip mill rolling, recrystallization behavior is controlled by the complicated interaction of precipitation with recovery and recrystallization.
      
Study of Recrystallization Kinetics of AgBr Microcrystals in Water-Gelatin Gel
      
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  recrystallized
After the crude product is recrystallized from tetrahydrofuran (THF), the final product is obtained with purity above 99%.
      
High-angle boundaries of growing recrystallized grains accumulate numerous vacancies which partly coagulate.
      
It is established that the samples recrystallized in a close volume under the on-board microgravity conditions "break off" from the container walls and touch the walls only in a few points.
      
These particles, which are located at the boundaries of growing recrystallized grains (twins of the original single crystal) occupying not more than 8% of the volume, impede the motion of grain boundaries and hamper further recrystallization.
      
Depending on the strontium concentration in the initial crystal, particles of the precipitated phases can substantially impede the growth of recrystallized grains.
      
更多          
  recrystallize
Isolated S-layer proteins recrystallize to form two-dimensional crystalline structures in solution, on a solid support, and on planar lipid membranes.
      
Quartz, garnet, hedenbergite, roepperite and apatite co-recrystallize with galena, sphalerite and chalcopyrite with balanced surface tensions.
      
Two step annealing at temperatures at about 600° C and 1000°C is required to recrystallize the Si layer on top and the substrate and to form an intermediate epitaxial, low ohmic CoSi2 layer.
      
This situation is approximately reached when the amorphous domains start to recrystallize.
      
The chlorite domains break down first forming (001) amorphous layers, that later coalesce to rounded, equant inclusions and finally recrystallize to olivine and spinels plus silica glass.
      
更多          
  recrystallizing
Some of the rolled composites were annealed by recrystallizing to remove the work hardening of the matrix alloy.
      
On recrystallizing optical anisotropy increased and a plasmon peak developed.
      
K2NbOF5 · H2O and K2TaF7 were prepared through melting Nb2O5 and Ta2O5 respectively with KHF2 · 2H2O, followed by recrystallizing.
      
Ore in retrograde zones is again brecciated with galena further recrystallizing after destruction of prograde recrystallization.
      
In addition, it appeared that the presence of lignin tended to restrict the amorphous cellulose produced by milling from recrystallizing into Cellulose II, whereas it had no influence on the recrystallization into Cellulose I.
      
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