助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   正面 在 无线电电子学 分类中 的翻译结果: 查询用时:0.061秒
图标索引 在分类学科中查询
所有学科
无线电电子学
安全科学与灾害防治
计算机软件及计算机应用
体育
汽车工业
建筑科学与工程
工业通用技术及设备
金属学及金属工艺
自然科学理论与方法
更多类别查询

图标索引 历史查询
 

很抱歉,暂未找到该词条在当前类别下的译词。
您可以查看在所有学科的译词。
相关语句
  front
    A Study on the Quantum Efficiency of the In_(0.53)Ga_(0.47)As/lnP PIN Photodiode From Front Side Incidence
    正面入射In_(0.53)Ga_(0.47)As/InP光电PIN管量子效率研究
短句来源
    Theoretical Analysis of Front Illuminated Structure for Long Wavelength InGaAs Diffusion PIN Photodiode
    长波长InGaAs扩散结PIN光电二极管正面入光结构的理论分析
短句来源
    Influence of InP layer on responsivity of the front and back illuminated PIN photo diodes
    InP层对正面及背面入光PIN探测器响应度影响研究
短句来源
    A theoretical model of the In0.53Ga0.47As/InP photodiode from front side incidence is presented.
    本文建立正面入射型In_(0.53)Ga_(0.47)As/InP光电PIN二极管量子效率理论分析模型;
短句来源
    Using CO2-laser irradiation from the back surface we have produced ohmic contacts with excellent electrical properties for GaAsFET without damaging the device structure on the front surface.
    将连续CO_2激光背面照射成功地应用于GaAsFET制备欧姆接触,既可避免激光正面照射对器件结构的破坏,又能得到比热退火为好的电学性能。
短句来源
更多       
  front side
    A Study on the Quantum Efficiency of the In_(0.53)Ga_(0.47)As/lnP PIN Photodiode From Front Side Incidence
    正面入射In_(0.53)Ga_(0.47)As/InP光电PIN管量子效率研究
短句来源
    A theoretical model of the In0.53Ga0.47As/InP photodiode from front side incidence is presented.
    本文建立正面入射型In_(0.53)Ga_(0.47)As/InP光电PIN二极管量子效率理论分析模型;
短句来源
    A front side incident external electro optic measurement mechanism is reported using 650nm semiconductor laser diode.
    报道了用 6 5 0nm的半导体激光二极管建立的一个正面入射式外部电光测量装置 .
短句来源
    Bulk silicon etching is executed after surface micromachining processes in the fabrication of silicon microphone,which causes new fabrication problems of the protection for the front side of the wafer and control of bulk silicon etching.
    在其工艺制作过程中,在表面硅微加工之后进行体硅的湿法腐蚀,由此产生了硅片的正面保护和体硅腐蚀的控制等新的工艺问题。
短句来源
    These are researched and resolved by several methods of protection for the front side of the wafer and techniques of self-halt for etching.
    从各种正面保护方法和体硅腐蚀自停止技术两方面对这一问题进行了研究和解决。
短句来源
查询“正面”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


The effects of CW CO2-laser irradiation on semiconductors are studied with primary emphasis on the physics of the process. Experimental results and theoretical considerations show that semiconductor sample can be heated to desired temperatures by CW CO2-laser irradiation. The CW CO2-laser irradiation with wavelength of 10.6 μm is different from the other short wavelength lasers in the following features: light absorption of laser radiation through free carrier absorption, uniform temperature distribution throughout...

The effects of CW CO2-laser irradiation on semiconductors are studied with primary emphasis on the physics of the process. Experimental results and theoretical considerations show that semiconductor sample can be heated to desired temperatures by CW CO2-laser irradiation. The CW CO2-laser irradiation with wavelength of 10.6 μm is different from the other short wavelength lasers in the following features: light absorption of laser radiation through free carrier absorption, uniform temperature distribution throughout the thickness of the wafer, enhancement of annealing efficiency by laser irradiation from back surface. The temperature profile produced by stationary CW CO2-laser irradiation is capable of annealing As+ ion implantation damage in Si with a solid-state regrowth mechanism. During the regrowth process the implanted As+ ions are incorporated into substitutional lattice sites and can be made electrically active to a high degree without redistribution of the original profile. Using CO2-laser irradiation from the back surface we have produced ohmic contacts with excellent electrical properties for GaAsFET without damaging the device structure on the front surface.

本文主要研究连续CO_2激光对半导体的照射效应。实验结果与理论分析说明,用连续CO_2激光照射可将半导体样片加热到所需的温度。与其它短波长的激光不同,波长为10.6μm的连续CO_2激光照射半导体有如下特点:CO_2激光是借助于自由载流子吸收与半导体耦合;样片在深度方向被均匀加热;激光背面照射可以增强退火效果。连续CO_2激光照射可以固相外延再生长的方式使As离子注入Si的损伤层退火恢复。在再生长的过程中注入的As离子进入替位,电激活率很高,而且不发生杂质再分布。将连续CO_2激光背面照射成功地应用于GaAsFET制备欧姆接触,既可避免激光正面照射对器件结构的破坏,又能得到比热退火为好的电学性能。

In this paper, the front illuminated (the photons are injected into a p+-InGaAs Layer) and the back illuminated (the photons are injected into a n+-InP Layer) Structures are compared. The design principle and theory mode of the front illuminated InGaAs PIN photodiodes are discussed. The inverse I-V charac-teristic, the quantum efficiency and the pulse responce time are analyzed. The performances of the prepared devices are as follow, operation bias Vop =-5V, dark current dencity JD = 2.5×10-6A/cm2, junction...

In this paper, the front illuminated (the photons are injected into a p+-InGaAs Layer) and the back illuminated (the photons are injected into a n+-InP Layer) Structures are compared. The design principle and theory mode of the front illuminated InGaAs PIN photodiodes are discussed. The inverse I-V charac-teristic, the quantum efficiency and the pulse responce time are analyzed. The performances of the prepared devices are as follow, operation bias Vop =-5V, dark current dencity JD = 2.5×10-6A/cm2, junction capacitance Cj = 0.7pF, quantum efficiency η=85%(λ= 1.3μm), pulse responce time △τ= 100ps.

本文通过对正面光照型(由p~+-InGaAs层注入光子)和背面光照型(由n~+-InP层注入光子)两种结构的比较,讨论了高性能正面光照型InGaAs PIN光电二极管的设计原则和理论模型.重点分析了器件反向I-V特性、量子效率、脉冲响应时间等问题.所研制的器件性能如下:在工作偏置V_(op)=-5V时,暗电流密度J_D=2.5×10~(-6)A/cm~2;结电容C_j=0.7pF;量子效率η=85%(λ=1.3μm);脉冲响应时间△τ=100ps

The removal of heavy metallic elements from the active region of a silicon waferhas been studied through the implantation of high energy Ar~+ into the backside of thewafer.The measurement of gettering effect is based on the measurements of the mino-rity carriers life-time.The experimental results show that the optimized doses are about7.5×10~(14)cm~(-2) and7.5×10~(15)cm~(-2).Finally,the relationship between gettering efficiencyand residual defect density is mentioned.

本文研究高能氩离子注入硅单晶片背面,对单晶片正面有源区里的重金属杂质等的吸杂效果.吸杂作用以少数载流子寿命的提高来衡量.结果表明,Ar~+的优化吸杂剂量在 7.5 ×10~(14)cm~(-2)及 7.5 ×10~(15)cm~(-2)左右.文中最后论及吸杂效果和剩余缺陷密度的关系.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关正面的内容
在知识搜索中查有关正面的内容
在数字搜索中查有关正面的内容
在概念知识元中查有关正面的内容
在学术趋势中查有关正面的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社