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集成电路
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  integrated circuit
    Secondly, the paper introduces the PC/104 bus and its interface designing, analyses the circuit designing of the control system of PC/104 bus for laser marking , and presents the VHDL(Very-High-Speed Integrated Circuit Hardware Description Language) module of each control segment based on FPGA(Field Progamable Gate Array).
    然后介绍了PC/104总线及接口设计方法,并详细分析了PC/104总线激光标刻控制系统的硬件电路设计,给出了基于FPGA(现场可编程门阵列)的各个控制模块的VHDL(超高速集成电路硬件描述语言)设计。
短句来源
    Fe-Al inter-metallic films which is used as main target for inertia confine fusion (ICF) experiment, have perfect prospect of application in integrated circuit and magnetically recording & reading materials because of its good anti-oxidized and magnetic-optical properties.
    Fe-Al金属间化合物薄膜是惯性约束聚变(ICF)实验研究用靶的主要靶型,又由于其好的抗氧化性及磁光特性,在集成电路、磁存储材料方面有着很好的应用前景。
短句来源
    Ultrathin SiO_xN_y films have been widely researched and used as the first choice of the gate dielectrics in the 0.1 μm Si-CMOS devices and integrated circuit.
    在0.1μm级的Si_CMOS器件及其集成电路中,作为替代传统SiO2栅介质的首选材料,超薄SiOxNy膜已被广泛研究和应用.
短句来源
    THE EFFECT OF THE PARASITIC PNP TRANSISTOR OF THIN - EPITAXY INTEGRATED CIRCUIT
    薄外延集成电路的寄生PNP效应
短句来源
    MEASURING THE DISTRIBUTION OF MAGNETIC FIELD OF SOLENOID WITH LINEAR HOLL INTEGRATED CIRCUIT
    用线性霍耳集成电路测量螺线管中磁场分布
短句来源
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  integrated circuits
    Atomic Force Microscopy Study of Surface Roughening of Au/NiCr/Ta Multilayers in Microwave Integrated Circuits
    微波集成电路(MIC)中Au/NiCr/Ta多层金属膜粗糙化机理的AFM研究
短句来源
    Study of laser application in the formation of nano-scale ultra-shallow junctions of integrated circuits
    激光在集成电路纳米超浅结形成中的应用综述
短句来源
    The measurements of local free carrier concentration and microabsorption a by 10.6 μm laser beam is significant before the production of integrated circuits.
    局域自由载流子浓度和微区吸收系数的激光(10.6μm)测量,在集成电路投入生产之前是非常有意义的.
短句来源
    TRAPPED HOLLOW IMAGE GUIDE FOR MILLIMETERWAVE INTEGRATED CIRCUITS
    适用于毫米波集成电路的陷波空心镜象波导
短句来源
    LAYERED IMAGING FOR SUBSURFACE FEATURES OF INTEGRATED CIRCUITS BY PHOTOACOUSTIC MICROSCOPY
    光声显微镜对集成电路的分层成象
短句来源
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  integrate circuit
    MEASURING SOLENOLD MAGNETIC FIELD BY HOLL'S INTEGRATE CIRCUIT
    用线性霍耳集成电路测量螺线管中磁场分布
短句来源
    Because of the widespread applications of mesoscopic devices in micro-electronics technology and integrate circuit and So on, more and more attention has been paid to the research of those in many Countries.
    由于介观器件在微电子技术和集成电路等方面具有重要的应用,因此对介观器件的研究越来越受到各国的重视。
短句来源
  “集成电路”译为未确定词的双语例句
    THE APPLICATION OF THE 555-INTEGRATED-CIRCUIT IN PHYSICAL EXPERIMENTS
    555集成电路在物理实验中的应用
短句来源
    The sigle chip EPF10K10 instead tens of universual logic 1C in the system.
    本系统采用了单片EPF10K10,如果用通用的逻辑集成电路设计,需要几十片。
短句来源
    The features and usages of infrared emitting diode and receiver TSAL6200/TSOP1838 are introduced. A new two-way infrared transmission control circuit using the single chip coder and decoder UM3758-108A is designed.
    介绍了红外遥控收发器件TSAL6200/TSOP1838的特性和使用,并与单片编解码集成电路UM3758 108A结合设计了一种新型双向红外传输控制电路,该电路具有良好的实用性和广泛的应用前景.
短句来源
    An integrated laser/modulator driver for high speed optical fiber communication systems has been developed.
    研制成功一种应用于高速光纤通信系统的激光器 /激光调制器驱动集成电路
短句来源
    Two kinds of laser/modulator drivers are designed and fabricated in 0 35μm CMOS process and 0 2μm GaAs PHEMT(pseudomorphic high electron mobility transistor) process,respectively. Their operating data speeds reach 2 5 and 10Gb/s. They can be used in SDH (synchronous digital hierarchy) transmission system of optic fiber communications.
    分别利用0 35μm CMOS工艺和0 2μm GaAs PHEMT(pseudomorphic high electron mobility transistor)工艺实现了激光驱动器集成电路,其工作速率分别为2 5Gb/s和 10Gb/s,可应用于光纤通信 SDH(synchronous dig ital hierarchy)传输系统.
短句来源
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  integrated circuit
Physical defects have always played an important role in integrated circuit (IC) yields, and the design sensitivity to these physical elements has continued to increase in today's nanometer technologies.
      
The designs ensure highly stable operation up to microwave frequencies, offer an electronically adjustable current-voltage characteristic, and can be implemented as a monolithic integrated circuit.
      
Near field zone of an integrated circuit exposed to an electromagnetic wave in a waveguide
      
The electromagnetic field distribution in the vicinity of an integrated circuit was calculated based on a numerical solution of the problem of electromagnetic wave diffraction on a model metal-dielectric structure in a waveguide tract.
      
A flux of high-velocity microparticles, transmitted through a thick steel obstacle in the regime of superdeep penetration, also passes through the case of an integrated circuit (IC) situated behind this wall and produces damage of the IC chip.
      
更多          
  integrated circuits
The device has been fabricated using standard integrated circuits processing methods combined with the Micro-Electro-Mechanical Systems process.
      
Concurrent Placement and Routing in the Design of Integrated Circuits
      
The method of parallel-sequential built-in self-testing in integrated circuits of the type SFPGAS
      
A novel approach is proposed for the characterization of the chemical stability of thin glass films used in the technology of silicon integrated circuits.
      
The storage device is based on KP537PY 13A static random-access memory integrated circuits.
      
更多          
  integrate circuit
A kind of correlator with double count systems, composed of IC (Integrate Circuit) chips is developed.
      
Intellectual Property (IP) reuse methodology has been widely used in Integrate Circuit (IC) design.
      


The polycrystalline silicon films (PSFs) have been produced by chemical vapor deposition (CVD) from silane gas. The microstructure of the films are investigated by Transmission electron microscope, Scanning electron microscope and Infrarad spectrometer. We have found that the microstructure is strongly dependent upon the deposition conditions. Experimental results indecate that super quality of PSFs which suits the Si-gate of MOS integrated circuit can be obtained with "lower temperature nucleation" at the initial...

The polycrystalline silicon films (PSFs) have been produced by chemical vapor deposition (CVD) from silane gas. The microstructure of the films are investigated by Transmission electron microscope, Scanning electron microscope and Infrarad spectrometer. We have found that the microstructure is strongly dependent upon the deposition conditions. Experimental results indecate that super quality of PSFs which suits the Si-gate of MOS integrated circuit can be obtained with "lower temperature nucleation" at the initial step under the whole deposition process. For nucleation temperature of 650℃~700℃ and the appropriate conditions, the films are smooth and uniform with a small grain size of ca. 300~500A. The mechanism of "lower temperature nucleation" and polycrystal film growth model are also discussed. In addition, the optical, electrical and dielectrical properties of PSFs have been measured. Because of the effect of the presence of grain boundaries, the differences of the characteristics between poly-Si and single-crystal-Si are calculated and analysed. Here some useful theoretical data are given for the design of devices.

多晶硅薄膜的制备采用硅烷(SiH_4)热分解化学汽相淀积法。利用透射电子显微镜、扫描电子显微镜和红外光谱仪等手段对膜的微结构进行了研究。我们发观膜的结构特性强烈地依赖于淀积条件,实验结果指出:假如在整个淀积过程的最初阶段采用“低温成核”,就不难获得适合于硅栅MOS集成电路的优质多晶硅膜。当低温成核温度为650℃~700℃,并控制一定的淀积条件,所制得的膜是光亮和均匀的,其晶粒大小约为300~500埃。文中对“低温成核”的机理及多晶薄膜的生长模型也进行了讨论。此外,对多晶膜的光学、电学和介电等性质进行了测量,对多晶硅由于晶粒间界的存在而引起的一系利与单晶硅不同的性质进行了计算和分析,从而为器件设计提供某些有用的理论数据。

The integrated optics is a marginal science which includes optics, electronics and solid state physics, developed in the recent ten years. Its appearence will make the information processing and transmitting engineering, such as commu- nication and computation techneque, facing a remarkable improvement. The dielectric thin film of planar optical wave-guide is the foundation of the integrated optical devices cither theoretically, or practically. Some of them have been used in the optical devices. Technically,...

The integrated optics is a marginal science which includes optics, electronics and solid state physics, developed in the recent ten years. Its appearence will make the information processing and transmitting engineering, such as commu- nication and computation techneque, facing a remarkable improvement. The dielectric thin film of planar optical wave-guide is the foundation of the integrated optical devices cither theoretically, or practically. Some of them have been used in the optical devices. Technically, it has developed the IC technique, but rather more critical and more complicated. The contents in this paper are The basic characteristic of the dielectric thin film of the optical waveguide; Coupled mode of the planar optical waveguide; An introduction on the planar optieal technology.

集成光学是近十年发展起来的一门光学、电子学和固体物理学的新的边缘学科。它的出现将使通讯技术、计算技术等信息处理和传输工程面临一场重大的改革。平面光波导介质薄膜无论在理论上,还是在实践上,都是集成光学元件的基础,而且有的己经应用在一些光学器件中。在工艺上,它发展了集成电路的生产工艺,但其要求更苛刻、更复杂。本文的主要内容是:(1)光导介质薄膜的基本特征;(2)平面光波导的耦合方式;(3)平面光波导的工艺简介。

After introducing the theory of MOS capacitance methods in the research of Si-SiO_2 systems, the principles of some fundamental measuring methods are emphasized. These are the high frequency C-V_G method, the high frequency C-V_G method with changing temperature, the quasistatic C-V_G method, the mixed quasi-static C-V_G and high frequency C-V_G method, transient process of pulse MOS capacitance and changing variable rates of D.C. bias etc.. From these measurements, we can get mobile charges, fixed charges,...

After introducing the theory of MOS capacitance methods in the research of Si-SiO_2 systems, the principles of some fundamental measuring methods are emphasized. These are the high frequency C-V_G method, the high frequency C-V_G method with changing temperature, the quasistatic C-V_G method, the mixed quasi-static C-V_G and high frequency C-V_G method, transient process of pulse MOS capacitance and changing variable rates of D.C. bias etc.. From these measurements, we can get mobile charges, fixed charges, interface-state densities, generative lifetime of silicon and generative rates on the surface etc. in Si-SiO_2 system. The measurements and analysis of these surface-states are of vital importance in developing Si bipolar devices, MOS devices, integrated circuits and CCD devices etc., both in improving production quality and raising their reliability and stability.

本文在介绍MOS电容法研究Si—SiO_2系统的理论根据的基础上,着重讨论了一些主要方法的测量原理。这些方法有高频C—V_G法,改变温度的高频C—V_G法,准静态C—V_G法,准静态和高频相结合的C—V_G法。对脉冲MOS电容瞬变过程,以及改变直流偏压的变化速率等也作了讨论。通过这些方法,可测得Si—SiO_2系统中的可动电荷、固定电荷、界面态密度、硅的产生寿命和表面产生速率等。这些表面态的测量和分析,在Si双极型器件、MOS器件、集成电路及CCD器件等的研制中,对改进产品质量、提高可靠性和稳定性,均具有重要的指导作用。

 
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