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重掺杂的
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     The results of heavily doped annealing samples of a-Si:H,as a contrast,are also discussed
     为了进行对比,对重掺杂的n ̄+a-Si:H膜退火试样也作了相应的论述。
短句来源
     Organic thin-film transistors based on the heavily doped silicon substrates were fabricated with two different designs: bottom and top contact configurations(referred to as BC-OTFTs and TC-OTFTs,respectively). The influence of configurations on the device performance was investigated.
     在重掺杂的Si衬底上分别制备了底电极(Bottom-contact organic thin-film transistors,BC-OTFTs)和顶电极(Top-contact organic thin-film transistors,TC-OTFTs)有机薄膜场效应晶体管,探讨了源、漏电极位置对器件性能的影响。
短句来源
     This paper reports for the first time the fabrication and the characteristics of a silicon he-terojunction microwave bipolar transistor with an n~+ a-Si: H emitter.
     本文首次报道采用重掺杂的氢化非晶硅(n~+a-Si∶H)作发射极的硅微波双极型晶体管的制备和特性.
短句来源
     It is found that pore's depth and diameter on n-InP with heavily doped concentration is larger than moderately doped samples.
     本文通过对不同掺杂浓度的样品进行刻蚀,发现重掺杂的样品刻蚀出的孔在深度和孔径上都比中度掺杂的大。
短句来源
     Heavily doped polycrystalline silicon thin films were deposited on low cost Al2O3 by thermal rapid chemical vapor deposition (RTCVD) . Compact and uniform films with grain size in the order of some micrometers were fabricated.
     利用快速热化学气相沉积(RTCVD)方法,在低成本的Al_2O_3衬底上沉积了重掺杂的致密多晶硅薄膜,薄膜的晶粒尺寸在微米级。
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  相似匹配句对
     CHAPTER 5 MARINE SEDIMENTATION Section 4 Heavy Mineral
     矿物
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     fresh weight in average.
     鲜
短句来源
     Doped Diamonds
     含掺杂的金刚石
短句来源
     Scaling Properties of Doping
     掺杂的标度性
短句来源
     The results of heavily doped annealing samples of a-Si:H,as a contrast,are also discussed
     为了进行对比,对掺杂的n ̄+a-Si:H膜退火试样也作了相应的论述。
短句来源
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  highly doped
Highly doped Si/SiO2/W sandwich structures with an exposed insulator edge: Electrical transport and electroforming
      
The results are presented of an experimental investigation into electrical transport in Si-SiO2-W sandwich structures with an exposed insulator edge that include highly doped silicon of either conductivity type, the insulator being about 20 nm thick.
      
The characteristics of the line attest to the possibility that small, highly doped, local regions with extended density-of-states tails can form in undoped GaAs.
      
Magnetic resonance, phase transition, and phase coexistence in a highly doped La0.8Sr0.2MnO3 manganite near the Curie point
      
Magnetic resonance and microwave impedance are studied in a highly doped La0.8Sr0.2MnO3 manganite near the Curie temperature.
      
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The features of an amorphous silicon solar cell are more complicate than its crystalline correspondance.It is necessary to introduce some new conceptions and parameters which are not used in crystalline cells.This paper deals with,experimentally and theoretically,following properties of a-Si solar solar cellsrthe internal field in the intrinsic bulk layer,the top dead layer and the determination of its thickness,equivalent shunt resistance and equivalent series resistance.The performance of an a-Si cell firstly...

The features of an amorphous silicon solar cell are more complicate than its crystalline correspondance.It is necessary to introduce some new conceptions and parameters which are not used in crystalline cells.This paper deals with,experimentally and theoretically,following properties of a-Si solar solar cellsrthe internal field in the intrinsic bulk layer,the top dead layer and the determination of its thickness,equivalent shunt resistance and equivalent series resistance.The performance of an a-Si cell firstly depends on the properties of the intrinsic bulk layer.In order to increase the internal field,the most important thing is to reduce the density of locallized states in the mobility gap.The heavily doped top layer for a junction cell is a dead layer.Its thickness can be deduced from the spectral responce of collection efficiency in the blue-violet region.Many useful information can be obtained from the illuminated I-V curve.The dependance of internal photocurrent on the bias,for example,acts as an equivalent shunt resistance,whose value can be deduced from the slope at the short circuit piont of I-V curve;and the slope at the open circuit piont can be used to estimate the extra series resistance of the cell.

本文讨论了本征层的内部电场、表面死层及其厚度测定、等效分流电阻及等效串联电阻。非晶硅太阳电池的性质首先取决于本征层的性质,为提高本征层内的电场,最重要的是降低迁移率隙中的定域态密度。表面重掺杂层本身是个死层,该层的厚度可由收集效率在兰-紫区的响应曲线求得。由光照情况下的I—V曲线,可分析出许多有用的情报。例如,内部光电流随偏压的变化,其作用相当于一个等效分流电阻,其数值可从短路点的斜率求得;而开路点的斜率则可用来判断电池是否存在额外的串联电阻。

Backside irradiation through the substrate with a CW CO2 laser has been used to produce Au-Ge-Ni ohmic contacts on n-GaAs with different doping concentrations(6×10(14)-7×10(17)cm-3).The laser alloyed contacts show better ohmic behavior and a contact resistance lower than that of furnace alloyed contacts by approximately an order of magnitude for low bulk concentrations(5×10(18)cm-3).The formation of a Ge-enri-ched n-type GaAs layer after laser alloying, as shown by the results of AES analysis, is helpful to...

Backside irradiation through the substrate with a CW CO2 laser has been used to produce Au-Ge-Ni ohmic contacts on n-GaAs with different doping concentrations(6×10(14)-7×10(17)cm-3).The laser alloyed contacts show better ohmic behavior and a contact resistance lower than that of furnace alloyed contacts by approximately an order of magnitude for low bulk concentrations(5×10(18)cm-3).The formation of a Ge-enri-ched n-type GaAs layer after laser alloying, as shown by the results of AES analysis, is helpful to improve the interface properties of the contacts.

本文利用CW CO_2激光对GaAs的穿透性从GaAs晶片背面进行辐照,形成了良好的Au-Ge-Ni-n GaAs欧姆接触。研究了激光合金化对不同摻杂浓度GaAs的欧姆接触,并与热合金化作了对比试验。结果表明,激光合金化有较低的比接触电阻,材料的载流子浓度越低,比接触电阻降低得越显著。AES分析表明,激光合金化造成了一个优良的以Ge取代Ga的重掺杂的n型GaAs层。

N type and P type mono-crystalline silicon with resistivity ranging from 0.1 to 5Ω.cm is prepared by floating zone method. During preparation, P_2O_5 and B_2O_3 are used as dopants for N type and P type silicon respectively.

区熔硅单晶纯度高,补偿度小,其高电阻率单晶在整流器件领域显示出优越性,但重掺杂工艺制备中,低电阻率FZ单晶较为困难,本文介绍一种简便掺杂方法,能较稳定生产10~10~(-2)Ω·cm区熔硅单晶。

 
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