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      理想表面
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  ideal surface
     With the surface geometry structure of (001), (114), (113), (112)and (111) surface, the densities of surface dangling band and surface electrons were calculated. We also discussed the difference of ideal surface and reconstruct surface and stability of surface.
     根据表面的原子排列分别计算了(001)、(114)、(113)、(112)和(111)各晶向的表面悬挂键密度以及表面的多余电子密度,探讨了理想表面和稳定表面的差别以及影响表面稳定性的因素。
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     by well combination of the too above mentioned, Ga diffused into the Si body through ideal surface and gained diffused result of high homogeneity and high repeatability.
     上述两者的有机结合,使Ga原子通过理想表面扩入硅体,从而得到高均匀性、高重复性的扩散结果。
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     The effective Hamiltonian of the ideal surface exciton in polar crystal is derived, taking account of the effect from the surface modes of lattice vibration and on ground of an one-phonon approximation.
     计及晶格振动表面模的影响,在单声子近似下,导出了极性晶体中理想表面激子的有效哈密顿量。
短句来源
     Then, these curves are fitted to form an ideal surface of the femur.
     再利用这组曲线,拟合形成骨骼的理想表面
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     These discrete points are used as control points for interpolation and fitting, forming a group of curves, then a method that draws up to match the cloud is adopted fitted to form an ideal surface of the bone.
     对股骨头点云通过插值、拟合等方法生成曲线,再采用分片拟合的方法拟合形成骨骼的理想表面
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  “理想表面”译为未确定词的双语例句
     The electronic states and wave functions of the ideal and relaxed (111) surfaces of Si and GaAs arc calculated.
     用这方法计算了Si和GaAs(111)理想表面和弛豫表面的电子态和波函数。
短句来源
     THE PARAMETERS CHARACTERISTICS OF TOPOGRAPHY OF SEVERAL IDEAL SURFACES
     若干理想表面的形貌参数特征
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     The electronic structures of 2×2 polar (003) surfaces of LiCoO2 have been studied using the first-principles projector augmented-wave (PAW) method within the generalized gradient approximation (GGA), based on the density functional theory (DFT).
     基于密度泛函理论的第一性原理投影平面波(PAW)方法,采用GGA近似,研究了LiCoO2(003)理想表面的几何与电子结构。
短句来源
     Additionally,it is shown that the adsorption of Xe atoms make the relaxed GaAs(110)surface to return to the ideal crystal geometrical configuration as generally expected.
     由此,认为Xe原子在GaAs(110)表面的吸附位置在桥位,并且发现吸附Xe原子后GaAs(110)表面有趋向于理想表面的趋势,表面重构现象趋于消失,表面原子间键长有一定的恢复,这与理论预言相符合.
短句来源
     The dynamic investigation of the scattering of O2 molecule from Si(100) unreconstructed surface has been made with quasi-classical trajectory method.
     采用准经典轨迹计算方法对双原子分子O2与非重构Si(100)理想表面的散射过程进行了动力学研究。
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  相似匹配句对
     On The Elastic Conformity Contact of Ideal Rough Surfaces
     理想粗糙表面的弹性全接触研究
短句来源
     A Study on Sliding Contact of the Ideal Rough Surface
     理想粗糙表面的滑动接触问题的研究
短句来源
     On Ideal
     论理想
短句来源
     About Ideal
     杂谈理想
短句来源
     However, the adsorption of small molecule on the GaN surfaces, are relatively in lack.
     )表面的吸附。
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  ideal surface
The growth of the nucleus in the microcrack passes through a stage of compaction, which is absent for the nuclei growing on the ideal surface.
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A theoretical investigation of the coulombic interaction of water molecules with an ideal surface of an ionic crystal is conducted.
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Microscopic theory of a transition layer on the ideal surface of semiinfinite dielectric media and the near-field effect
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Removal of this contaminant through solvent cleaning and plasma oxidation provided an ideal surface for attachment of the organosilane adhesion promoter.
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Our results show that in order to obtain an ideal surface finish a low or not very high Ra value and a negative Rsk value are needed.
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         It is discussed that the effect of non-ideal surface on the single-phonon state density in fine-dimensional harmonic Chain. The softening or stiffening phonon can be obtained by means of the inserting non-ideal surfaces.
            本文讨论非理想表面对一维简谐链单声子态密度函数的影响,发现非理想表面可以导致声子的软化或硬化。
文摘来源
         The effect of non-ideal surface of three-dimensional crystal on the electron state density is discussed by the bi-time Green's function method and the- conditions for higher electron state density are analysed:
            本文利用双时格林函数方法,讨论三维晶体非理想表面对电子态密度的影响,分析了提高电子态密度的条件.
文摘来源
         There are twe problems involved in the C1 chemisorption on the GaAs (110) surface, one is whether Cl adsorbs on the relaxed surface or on the unrelaxed one, while the other is whether Cl bonded with the surface anion or with the cation. The present work indicates that the Cl atom adsorbs on the relaxed GaAs (110) surface and is bonded with the surface As. The density of states calculated from this configuration seems to agree well with existing experimental results.
            本文主要研究Cl是吸附在GaAs(110)理想表面还是弛豫表面,是与表面正离子成键还是与表面负离子成键。计算采用集团模型和密度自洽的EHT方法。结果表明Cl只能吸附在弛豫的GaAs(110)面上,与表面As原子成键。在这个位置上吸附Cl的态密度与实验符合较好。
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