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     The lateral vibration frequency of PCT beam mid-span is obviously on the low side and is only 40—50 percentage of the reference value.
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GaAs M-I (10~2A)-S Schottky barrier FET (MIS SB FET) with high doped chan-nel is presented for the first time.Using Si implantation into GaAs S.I.substrate, avery thin and high-doped layer with a peak carrier concentration of 0.5-1×10~(13)cm~(-2)and a thickness less than 0.1μm is formed for FET channel as well as for source/drainlayer,between Al gate and GaAs active layer,there is an anodized native oxide layerwith a thickness less than 10~2 A.The GaAs MIS SB FET of dual-gate structure with agate length of 2μm...

GaAs M-I (10~2A)-S Schottky barrier FET (MIS SB FET) with high doped chan-nel is presented for the first time.Using Si implantation into GaAs S.I.substrate, avery thin and high-doped layer with a peak carrier concentration of 0.5-1×10~(13)cm~(-2)and a thickness less than 0.1μm is formed for FET channel as well as for source/drainlayer,between Al gate and GaAs active layer,there is an anodized native oxide layerwith a thickness less than 10~2 A.The GaAs MIS SB FET of dual-gate structure with agate length of 2μm and a width of 400 μm is fabricated. The pinch-off voltage of obtained FETs is about 4 V.The determined transconduc-tance at zero gate bias is 25 mS,higher than normally-made MES FETs with a similarstructure in this laboratory. On the basis of two-region model and the effect of thin insulating layer, the GaAsMIS SB FETs DC and microwave characteristics are computed and compared with nor-mallymade MESFETs.

本文首次报道了高掺杂沟道的GaAs MIS SB FET.在S.I.GaAs衬底上用离子注入Si,同时形成高浓度、超薄的有源层和欧姆接触区,载流子峰值浓度为 0.5-1×10~(13)cm~(-3).在Al栅和GaAs有源层间有一层用阳极氧化制备的自身氧化膜,厚度10~2A|°.MIS SB FET为双栅器件,栅尺寸 2 × 400 μm. 实验所得 MIS SB FET的夹断电压为4V,零栅偏跨导为 25mS,高于本实验室相似结构常规工艺的 MES FET器件(峰值浓度1-2×10~(17)cm~(-3),没有氧化膜). 在二区间模型基础上,计入薄氧化膜影响,模拟计算了 MIS SB FET的直流和微波特性,并与常规工艺的 MES FET作了比较.

Gliding hoop cable connection of suspen-dome structure is brought out in this paper.And frozen-heated method is employed to analyze its mechanical behavior when the structure is applied with half-span loads.Compared to the non-gliding hoop cable connection,the gliding hoop cable connection can adjust internal forces and decrease a peak value of internal forces of hoop cables and radial cables,while it has little influence on the mechanical behavior of the top lattice shell of the structure.

提出了弦支穹顶结构滑动环索节点的连接方式 ,应用冷冻升温结构分析方法研究其受力性能 ,并与非滑动环索连接节点的计算结果进行对比 .计算结果表明 ,当结构承受半 (偏 )跨荷载时 ,滑动环索的连接方式对上部网壳结构的受力性能几乎没有影响 ,但却可以大大降低环索、斜索和撑杆的内力幅值 ,使其均衡 ,极大地改善弦支穹顶结构的受力性能

 
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