A Research on Current Transportation Theory of Heterojunction Diffusion Model I. A New Way for Establishing Equilibrium Energy Band Diagram of an Abrupt Heterojunction
The influence of base recombination on common emitter gain in nSi/pSi 1- x Ge x /nSi heterojunction bipolar transistors (HBT’s) has been analyzed in detail by two dimension numerical simulation method. Gummel plot and equilibrium energy band diagram of Si 1- x Ge x HBT are shown.
采用二维数值模拟方法详细分析了基区复合电流对 n Si/p Si1- x Gex/n Si应变基区异质结双极晶体管 ( HBT)共射极电流放大系数 β的影响 ,给出了 Si1- x Gex HBT的 Gummel图、平衡能带图 .
The paper begins at electric ruin phenomenon of the electric heating converter,using electric isotropical properties of the nesa sets up one-dimensional grain line model,and gives a equilibrium energy band diagram and band tail states profile of grain line model.
A Research on Current Transportation Theory of Heterojunction Diffusion Model I. A New Way for Establishing Equilibrium Energy Band Diagram of an Abrupt Heterojunction
The influence of base recombination on common emitter gain in nSi/pSi 1- x Ge x /nSi heterojunction bipolar transistors (HBT’s) has been analyzed in detail by two dimension numerical simulation method. Gummel plot and equilibrium energy band diagram of Si 1- x Ge x HBT are shown.
采用二维数值模拟方法详细分析了基区复合电流对 n Si/p Si1- x Gex/n Si应变基区异质结双极晶体管 ( HBT)共射极电流放大系数 β的影响 ,给出了 Si1- x Gex HBT的 Gummel图、平衡能带图 .
The paper begins at electric ruin phenomenon of the electric heating converter,using electric isotropical properties of the nesa sets up one-dimensional grain line model,and gives a equilibrium energy band diagram and band tail states profile of grain line model.
2. We propose a method to construct omnidirectional reflectors withwide band gaps by one dimensional photonic crystals, and the main notion is the direct tailor of the projected band structures.
The energy bandgap, contact potential difference and potential barrier width of abrupt semiconductor heterojunctions are discussed and investigated in the paper Process technology for SiGe/Si HBT based on MBE is presented, and results of the experiment are provided
Investigation of the temperature dependence of the dislocation interaction with the F centers permitted determination of the position of the dislocation-induced electronic band (DEB) in the band diagram of the crystal.
It has been shown that superlattices of the (n, 0) zigzag type with linearly arranged pairs of H atoms have band structures similar to the spectra of (n, 0) carbon nanotubes.
Earlier, we found the energies of formation and the electron band structures of the fullerene molecule C60 and its methylated and hydrogenated chemical derivatives with saturated r6 bonds of the type C60(CH3-r6-H)n with n from 1 to 6.
A precise expression of the C-t transient response curve of a MOS structurethrough calculation has been obtained according to the energy band diagram underthe condition of quasi-equilibrium and the precise bulk generation width. Thus,thebulk generation lifetime of minority carriers car be calculated directly from the mea-sured C-t curves,and a new method for determining bulk generation lifetime is ob-tained.The result of the theoretical calculation is in agreement with that of theexperiments. The method men...
An n-Fe2O3 film was grown on a n-Si substrate which had undergone surface treatment to form a double layer semiconductor electrode. The influence of the interface state on the electrode properties was studied. From photoluminescence measurements, we found that an interface state with high density of states exists lying above the top of the Fe2O3 valence band at 1.61 eV. The Fermi level is pinned by this interface state.
It is well known that the hot-electron emission model is a base of the classical theory of heterojunction, Anderson's theory; and the diffusion model is a base of ho-mojunction, Shockley's theory. But the homojunction is only a specific case of the heterojunction, therefore they should have an united model.
能带图
band diagram
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